HY57V281620ALT-6 HYNIX [Hynix Semiconductor], HY57V281620ALT-6 Datasheet - Page 6

no-image

HY57V281620ALT-6

Manufacturer Part Number
HY57V281620ALT-6
Description
4 Banks x 2M x 16bits Synchronous DRAM
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet
DC CHARACTERISTICS II
Note :
1.I
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V281620AT-6/7/K/H/8/P/S
4.HY57V281620ALT-6/7/K/H/8/P/S
Rev. 1.3/Aug. 01
Operating Current
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Burst Mode Operating
Current
Auto Refresh Current
Self Refresh Current
DD1
and I
Parameter
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
I
I
I
I
I
I
I
I
I
I
I
I
Symbol
DD1
DD2P
DD2PS
DD2N
DD2NS
DD3P
DD3PS
DD3N
DD3NS
DD4
DD5
DD6
Burst length=1, One bank active
t
CKE
CKE
CKE
Input signals are changed one time during
2clks. All other pins
CKE
Input signals are stable.
CKE
CKE
CKE
Input signals are changed one time during
2clks. All other pins
CKE
Input signals are stable.
t
All banks active
t
CKE
RC
CK
RRC
(TA=0 to 70 C, V
t
t
RC
CK
V
V
V
V
V
V
V
V
0.2V
t
RRC
IL
IL
IH
IH
IL
IL
IH
IH
(min), I
(min), I
(max), t
(max), t
(max), t
(max), t
(min), CS
(min), t
(min), CS
(min), t
(min), All banks active
Test Condition
OL
OL
CK
CK
CK
CK
CK
CK
DD
=0mA
=0mA
=
=
= 15ns
=
= 15ns
=
=3.3 0.3V, V
V
V
V
V
DD
DD
IH
IH
(min), t
(min), t
-0.2V or
-0.2V or
CK
CK
CL=3
CL=2
SS
= 15ns
= 15ns
0.2V
0.2V
=0V)
120
140
100
240
-6
120
130
100
240
-7
110
120
120
240
-K
Speed
800
20
10
40
40
110
120
100
220
2
2
7
7
2
-H
100
110
100
200
-8
HY57V281620A
100
100
100
200
-P
100
100
100
200
-S
Unit
7
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4

Related parts for HY57V281620ALT-6