EN29LV040A-55RPIP EON [Eon Silicon Solution Inc.], EN29LV040A-55RPIP Datasheet - Page 18

• Manufacturer Part Number: EN29LV040A-55RPIP
• Description: 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 7. DC Characteristics
(T
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Symbol
V
a
I
I
I
I
V
V
CC1
CC2
CC3
CC4
V
V
I
V
I
= 0°C to 70°C or - 40°C to 85°C; V
I
LKO
LO
OH
OL
ID
LI
IH
ID
IL
Supply Current (Program or Erase)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Current (Standby - CMOS)
Supply Current (read - CMOS)
Output High Voltage CMOS
Supply voltage (Erase and
Output Leakage Current
Automatic Sleep Mode
Input Leakage Current
Output Low Voltage
Input High Voltage
Input Low Voltage
Program lock-out)
Parameter
CC
= 2.7-3.6V)
Rev. E, Issue Date: 2011/10/27
Byte program, Sector or
Chip Erase in progress
CE# = V
CE# = Vcc ± 0.3V
V
V
Test Conditions
0V≤ V
I
IH
0V≤ V
IL
OH
I
OL
18
= Vss ± 0.3 V
= Vcc ± 0.3 V
f = 5MHz
A9 = V
= -100 μA,
IL
= 4.0 mA
OUT
; OE# = V
IN
≤ Vcc
≤ Vcc
ID
© 2003 Eon Silicon Solution, Inc.,
IH
;
Vcc -
0.7 x
0.4V
10.5
Min
-0.5
Vcc
2.3
Typ
15
7
1
1
EN29LV040A
Vcc +
www.eonssi.com
Max
0.45
11.5
100
5.0
0.8
0.3
2.5
5.0
±1
±1
12
30
Unit
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V