HMC407MS8GE HITTITE [Hittite Microwave Corporation], HMC407MS8GE Datasheet
HMC407MS8GE
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HMC407MS8GE Summary of contents
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... Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required General Description The HMC407MS8G & HMC407MS8GE are high efficiency GaAs Transistor (HBT) MMIC Power amplifi ers which operate between 5 and 7 GHz. The amplifi er requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output ...
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Broadband Gain & Return Loss S21 S11 0 S22 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 + +85 C -40 ...
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Power Compression @ 5.8 GHz INPUT POWER (dBm) Noise Figure vs. Temperature 5.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 -20 ...
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... Package Information Part Number Package Body Material HMC407MS8G Low Stress Injection Molded Plastic HMC407MS8GE RoHS-compliant Low Stress Injection Molded Plastic [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...
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Pin Descriptions Pin Number Function 1 Vcc1 11 2 Vpd GND 4 RFIN 5 RFOUT 8 Vcc2 Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 ...
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... DC Header 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum U1 HMC407MS8G / HMC407MS8GE Amplifi er [2] PCB 104628 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...