HMC407MS8GE HITTITE [Hittite Microwave Corporation], HMC407MS8GE Datasheet

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HMC407MS8GE

Manufacturer Part Number
HMC407MS8GE
Description
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMC407MS8GE
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
HMC407MS8GE
Manufacturer:
HITTITE
Quantity:
20 000
Part Number:
HMC407MS8GETR
Manufacturer:
Triquint
Quantity:
1 400
11 - 28
11
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 5 - 7 GHz applications:
• UNII
• HiperLAN
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v03.1006
= +25° C, Vs = 5V, Vpd = 5V
Order On-line at www.hittite.com
Vpd = 0V/5V
tON, tOFF
Vpd = 5V
HMC407MS8G
Min.
32
10
21
Features
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5V
Power Down Capability
No External Matching Required
General Description
The HMC407MS8G & HMC407MS8GE are high
efficiency
Transistor (HBT) MMIC Power amplifi ers which
operate between 5 and 7 GHz. The amplifi er requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
amplifi er is packaged in a low cost, surface mount
8 leaded package with an exposed base for im-
proved RF and thermal performance. The amplifi er
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consum-
ption when the amplifi er is not in use.
0.002 / 230
0.025
5 - 7
Typ.
5.5
15
12
15
25
29
37
30
7
POWER AMPLIFIER, 5 - 7 GHz
GaAs
0.035
Max.
18
GaAs InGaP HBT MMIC
InGaP
Min.
12
22
36
/
407MS8GE
0.002 / 230
5.6 - 6.0
Heterojunction
0.025
Typ.
5.5
25
29
40
30
15
12
15
7
0.035
Max.
18
Bipolar
dB/ °C
Units
dBm
dBm
dBm
GHz
mA
mA
dB
dB
dB
dB
ns

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HMC407MS8GE Summary of contents

Page 1

... Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required General Description The HMC407MS8G & HMC407MS8GE are high efficiency GaAs Transistor (HBT) MMIC Power amplifi ers which operate between 5 and 7 GHz. The amplifi er requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output ...

Page 2

Broadband Gain & Return Loss S21 S11 0 S22 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 + +85 C -40 ...

Page 3

Power Compression @ 5.8 GHz INPUT POWER (dBm) Noise Figure vs. Temperature 5.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 -20 ...

Page 4

... Package Information Part Number Package Body Material HMC407MS8G Low Stress Injection Molded Plastic HMC407MS8GE RoHS-compliant Low Stress Injection Molded Plastic [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 5

Pin Descriptions Pin Number Function 1 Vcc1 11 2 Vpd GND 4 RFIN 5 RFOUT 8 Vcc2 Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 ...

Page 6

... DC Header 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum U1 HMC407MS8G / HMC407MS8GE Amplifi er [2] PCB 104628 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

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