HMC414MS8GE HITTITE [Hittite Microwave Corporation], HMC414MS8GE Datasheet

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HMC414MS8GE

Manufacturer Part Number
HMC414MS8GE
Description
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

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11 - 58
11
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v04.0607
= +25° C, As a Function of Vs, Vpd = 3.6V
Vpd = 0V / 3.6V
Order On-line at www.hittite.com
Vpd = 3.6V
tON, tOFF
HMC414MS8G
Min.
17
21
30
POWER AMPLIFIER, 2.2 - 2.8 GHz
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
General Description
The HMC414MS8G & HMC414MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifi ers which operate
between 2.2 and 2.8 GHz. The amplifi er is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal per-
formance. With a minimum of external components,
the amplifi er provides 20 dB of gain, +30 dBm of satu-
rated power at 32% PAE from a +5V supply voltage.
The amplifi er can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Vs = 3.6V
0.002 / 240
2.2 - 2.8
Typ.
0.03
6.5
20
25
27
35
45
8
9
7
Max.
0.04
25
GaAs InGaP HBT MMIC
Min.
17
23
35
/
414MS8GE
0.002 / 300
2.2 - 2.8
Vs = 5V
0.03
Typ.
7.0
20
27
30
39
45
8
9
7
Max.
0.04
25
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
mA
dB
dB
dB
dB
ns

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HMC414MS8GE Summary of contents

Page 1

... Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count General Description The HMC414MS8G & HMC414MS8GE are high effi- ciency GaAs InGaP Heterojunction Bipolar Tran- sistor (HBT) MMIC Power amplifi ers which operate between 2.2 and 2.8 GHz. The amplifi er is packaged ...

Page 2

Gain vs. Temperature, Vs + 2.2 2.4 2.6 2.8 FREQUENCY (GHz) Return Loss, Vs= 3.6V 0 S11 -4 S22 -8 -12 -16 -20 2 2.2 ...

Page 3

Psat vs. Temperature, Vs= 3. 2.2 2.4 FREQUENCY (GHz) Power Compression@ 2.4 GHz, Vs= 3.6V 36 Pout 30 Gain PAE - INPUT ...

Page 4

Reverse Isolation vs. Temperature, Vs= 3.6V 0 -10 +25 C -20 +85 C -40 C -30 -40 2 2.2 2.4 2.6 2.8 FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 3. + ...

Page 5

... Operating Temperature Outline Drawing Package Information Part Number HMC414MS8G HMC414MS8GE RoHS-compliant Low Stress Injection Molded Plastic [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 6

Pin Descriptions Pin Number Function 1 RFIN RFOUT Ground: Backside of package has exposed metal ground slug that must be 5 GND connected to ground thru a short path. Vias under the device are required. ...

Page 7

... C2 100 pF Capacitor, 0402 Pkg 330 pF Capacitor, 0603 Pkg. C7 2.2 μF Capacitor, Tantalum L1 18nH Inductor 0603 Pkg. HMC414MS8G / HMC414MS8GE U1 Amplifi er [2] PCB 105074 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 8

Application Circuit * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA ...

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