7N60 UTC [Unisonic Technologies], 7N60 Datasheet - Page 2

• Manufacturer Part Number: 7N60
• Description: 7.4 Amps, 600 Volts N-CHANNEL MOSFET
• Manufacturer: UTC [Unisonic Technologies]

7N60
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive Limited by T
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (T
Derate above 25℃
Junction Temperature
Operating and Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
THERMAL DATA
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ABSOLUTE MAXIMUM RATINGS (
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
C
= 25℃)
PARAMETER
PARAMETER
J(MAX)
T
T
SYMBOL
△BV
C
C
R
V
BV
t
I
I
C
C
t
(T
△T
d(OFF)
T
C
Q
Q
I
GSSR
GS(TH)
DS(ON)
= 25°C
= 100°C
GSSF
d(ON)
g
Q
DSS
t
OSS
RSS
t
C
ISS
FS
GD
R
F
GS
C
DSS
G
DSS
= 25℃, unless otherwise specified)
=25℃, unless otherwise specified)
J
/
V
V
V
V
V
I
25°C
V
V
V
V
V
(Note 4, 5)
V
(Note 4, 5)
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
= 250µA, Referenced to
=25V, V
=480V, I
SYMBOL
SYMBOL
= 600V, V
= 480V, T
= V
= 50V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
=300V, I
TEST CONDITIONS
V
dv/dt
T
V
E
E
θ
I
θ
θ
I
P
T
GS
DSS
GSS
I
DM
STG
AR
CS
AS
AR
JA
JC
D
D
J
, I
D
GS
D
D
D
D
= 250µA
D
DS
=7.4A, V
= 250µA
DS
= 3.7A
= 3.7A (Note 4)
=0V, f=1.0 MHz
C
GS
=7.4A, R
= 125°C
= 0V
= 0V
= 0V
MIN
GS
G
=10 V
=25Ω
-55 ~ +150
RATINGS
+150
29.6
14.2
1.14
600
580
142
±30
TYP
7.4
7.4
4.7
4.5
0.5
MIN
600
2.0
Power MOSFET
MAX
TYP MAX UNIT
0.67
14.5
62.5
0.88
6.4
29
7
QW-R502-076,B
1400
-100
100
100
180
170
140
130
4.0
1.0
10
21
70
38
UNIT
W/℃
V/ns
UNIT
°C/W
°C/W
°C/W
mJ
mJ
W
℃
℃
2 of 7
V
V
A
A
A
A
V/℃
µA
µA
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S