7N60 UTC [Unisonic Technologies], 7N60 Datasheet - Page 6

• Manufacturer Part Number: 7N60
• Description: 7.4 Amps, 600 Volts N-CHANNEL MOSFET
• Manufacturer: UTC [Unisonic Technologies]

7N60
2000
1800
1000
10
10
10
800
400
2.5
2.0
1.5
1.0
0.5
0.0
TYPICAL CHARACTERISTICS
0
-1
1
0
10
10
0
Top:
Bottorm :5.5V
-1
On-Resistance Variation vs. Drain Current
-1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10 .0V
15.0V
8 .0V
7 .0V
6 .5V
6 .0V
V
Drain-Source Voltage, V
GS
On-Region Characteristics
Drain-SourceVoltage , V
5
Capacitance Characteristics
Drain Current , I
and Gate Voltage
10
10
10
0
0
C
V
V
C
rss
GS
GS
oss
=10V
=20V
*Notes:
1. 250μs Pulse Test
2. T
15
C
C
iss
=25℃
D
*Note: T
(A)
C
(C
C
C
DS
10
10
DS
iss=
oss
rss
*Notes:
1. V
2. f = 1MHz
ds
1
(V)
=C
1
(V)
=shorted)
=C
C
20
g
GS
J
gd
s+C
ds
=25℃
=0V
+C
gd
gd
25
10
10
10
10
10
10
10
10
10
10
2
1
0
-1
0
1
-1
1
0
-1
10
0.2
2
0
Body Diode Forward Voltage Variation vs .
Source Current and Temperature
150℃
25℃
150℃
Source-Drain Voltage, V
Maximum Safe Operating Area
0.4
Drain-Source Voltage, V
Gate-Source Voltage, V
*Notes:
1. Tc=25℃
2. T
3. Single Pulse
4
Transfer Characteristics
Operation in This Area
10
is Limited by R
J
=150℃
1
0.6
25℃
6
Power MOSFET
*Notes:
1. V
2. 250μs Pulse Test
*Notes:
1. V
2. 250μs Pulse Test
-55℃
0.8
DC
DS
10
GS
DS(on)
10ms
=50V
=0V
1ms
2
SD
100μs
DS
GS
8
1.0
(V)
QW-R502-076,B
(V)
(V)
6 of 7
10
1.2
10
3