Q67000-S279 SIEMENS [Siemens Semiconductor Group], Q67000-S279 Datasheet
Q67000-S279
Manufacturer Part Number
Q67000-S279
Description
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.Q67000-S279.pdf
(5 pages)
IGBT Transistor
Preliminary Data
Type
BSP 280 Q67000-S279
Maximum Ratings
Parameter
Continuous collector current
Soldering point,
Continuous collector current ambient,
Pulsed collector current
Soldering point,
Collector-emitter voltage
Gate-emitter voltage
Power dissipation
Soldering point,
Ambient
Operating and storage temperature range
Thermal resistance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
IGBT = Insulated Gate Bipolar Transistor
1)
V
I
N channel
MOS input (voltage-controlled)
High switch speed
Very low tail current
Latch-up free
Suitable freewheeling diode BAX 280
Transistor on epoxy pcb 40 mm
C
CE
1000 V
2.5 A
Ordering Code Tape and Reel
1)
T
T
T
T
T
chip-ambient
chip-soldering point
Information
E6327: 1000 pcs/reel
S
S
S
S
A
= 25 ˚C
= 80 ˚C
= 80 ˚C
= 80 ˚C
= 25 ˚C
40 mm
T
A
1.5 mm with 6 cm
= 80 ˚C
Symbol
I
I
I
V
V
P
T
R
R
–
–
C
C
C puls
j
CE
GE
tot
thJA
thJS
,
1
G
Pin Configuration
T
stg
2
copper area for drain connection.
2
C
3
E
Values
2.5
1.5
0.5
3.0
1000
10
1.8
– 40 … + 150
70
6
E
40/150/56
20
4
C
Marking
BSP 280
Unit
A
V
W
˚C
K/W
–
BSP 280
Package
SOT-223
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Q67000-S279 Summary of contents
Page 1
... N channel MOS input (voltage-controlled) High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel BSP 280 Q67000-S279 Maximum Ratings Parameter Continuous collector current T Soldering point, T Continuous collector current ambient, Pulsed collector current ...
Page 2
Electrical Characteristics ˚C, unless otherwise specified. j Parameter Static Characteristics Collector-emitter breakdown voltage 0 Gate threshold voltage 0 ...
Page 3
Electrical Characteristics (cont’ ˚C, unless otherwise specified. j Parameter Turn-on losses 600 G(off) Turn-off delay time V = 600 ...
Page 4
Characteristics ˚C, unless otherwise specified. j Typ. output characteristics parameter Typ. capacitances parameter MHz ...
Page 5
Typ. saturation characteristic parameter: CE(sat) GE Typ. gate charge = 125 ˚C parameter: j BSP 280 Gate plus ...