Q67000-S279 SIEMENS [Siemens Semiconductor Group], Q67000-S279 Datasheet - Page 2

• Manufacturer Part Number: Q67000-S279
• Description: IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Electrical Characteristics
at
Parameter
Static Characteristics
Collector-emitter breakdown voltage
V
Gate threshold voltage
V
Collector-emitter saturation voltage
V
T
T
T
V
T
T
T
Zero gate voltage collector current
V
T
T
Gate-emitter leakage current
V
Dynamic Characteristics
Forward transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
Rise time
V
j
j
j
j
j
j
j
j
GE
GE
GE
GE
CE
GE
CE
CE
CE
CE
CC
CC
T
j
= 15 V,
= 25 ˚C
= 125 ˚C
= 150 ˚C
= 15 V,
= 25 ˚C
= 125 ˚C
= 150 ˚C
= 1000 V,
= 25 ˚C
= 125 ˚C
= 20 V,
= 0,
= 0,
= 0,
= 600 V,
= 600 V,
= 0,
=
= 20 V,
= 25 ˚C, unless otherwise specified.
V
CE
V
V
V
I
C
,
GE
GE
GE
= 0.1 mA
I
C
I
I
V
I
= 25 V,
= 25 V,
= 25 V,
C
C
V
V
= 0.1 mA
C
CE
GE
GE
= 0.5 A
V
= 1.5 A
= 1.5 A
GE
= 0
= 15 V,
= 15 V,
= 0
f
f
f
= 1 MHz
= 1 MHz
= 1 MHz
R
R
G(on)
G(on)
= 25 ,
= 25 ,
I
I
C
C
= 1.5 A
= 1.5 A
Symbol
V
V
t
t
V
I
I
C
C
C
g
d(on)
r
CES
GES
(BR)CES
GE(th)
CE(sat)
fs
oss
rss
i i ss
min.
1000
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5.5
1.8
2.1
2.2
2.8
3.8
4.0
1
–
0.1
0.6
225
25
13
20
15
Values
max.
–
6.5
–
–
3.0
3.3
4.3
4.5
25
100
100
–
–
–
–
–
–
BSP 280
Unit
V
nA
S
pF
ns
A