Q67078-A4204-A2 SIEMENS [Siemens Semiconductor Group], Q67078-A4204-A2 Datasheet
Q67078-A4204-A2
Manufacturer Part Number
Q67078-A4204-A2
Description
IGBT (High switching speed Low tail current Latch-up free Avalanche rated)
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.Q67078-A4204-A2.pdf
(5 pages)
IGBT
Semiconductor Group
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
• Low forward voltage drop
Remark: The TO-218 AB case doesn't solve the
standards VDE 0110 and UL 508 for creeping distance
Type
BUP 309
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Avalanche energy, single pulse
I
L = 200 µH, T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
GE
= 15 A, V
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 25 °C
= 20 k
Preliminary data
CC
j
= 25 °C
= 50 V, R
GE
p
= 1 ms
= 25
V
1700V 25A
CE
I
C
1
Package
TO-218 AB
Symbol
V
V
V
I
I
E
P
T
T
C
Cpuls
j
stg
CE
CGR
GE
AS
tot
Pin 1
G
Ordering Code
Q67078-A4204-A2
-55 ... + 150
-55 ... + 150
Values
± 20
1700
1700
310
25
16
50
32
23
Pin 2
C
Jul-30-1996
BUP 309
Unit
V
A
mJ
W
°C
Pin 3
E
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Q67078-A4204-A2 Summary of contents
Page 1
... TO-218 AB Symbol CGR Cpuls tot stg 1 BUP 309 Pin 1 Pin 2 Pin Ordering Code Q67078-A4204-A2 Values Unit 1700 V 1700 ± 310 -55 ... + 150 °C -55 ... + 150 Jul-30-1996 ...
Page 2
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, ...
Page 3
Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 1200 Gon Rise time V = 1200 ...
Page 4
Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...
Page 5
Package Outlines Dimensions in mm Weight Semiconductor Group 5 BUP 309 Jul-30-1996 ...