BLF881_1012 PHILIPS [NXP Semiconductors], BLF881_1012 Datasheet

BLF881_1012

Manufacturer Part Number

BLF881_1012

Description

UHF power LDMOS transistor

Manufacturer

PHILIPS [NXP Semiconductors]

Datasheet

1.BLF881_1012.pdf (18 pages)

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1. Product profile

CAUTION

1.1 General description

1.2 Features and benefits

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent

ruggedness and broadband performance of this device makes it ideal for digital

transmitter applications.

Table 1.

RF performance at V

[1]

Mode of operation

2-tone, class AB

DVB-T (8k OFDM)

BLF881; BLF881S

UHF power LDMOS transistor

Rev. 3 — 7 December 2010

2-Tone performance at 860 MHz, a drain-source voltage V

drain current I

DVB performance at 858 MHz, a drain-source voltage V

drain current I

Integrated ESD protection

Excellent ruggedness

High power gain

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Peak envelope power load power = 140 W

Power gain = 21 dB

Drain efficiency = 49 %

Third order intermodulation distortion = −34 dBc

Average output power = 33 W

Power gain = 21 dB

Drain efficiency = 34 %

Shoulder distance = −33 dBc (4.3 MHz from center frequency)

Typical performance

= 0.5 A:

(MHz)

858

= 50 V in a common-source 860 MHz test circuit.

= 860; f

= 860.1

(W) (W)

140

L(PEP)

(W)

L(AV)

(dB) (%) (dBc) (dBc)

of 50 V and a quiescent

Product data sheet

IMD3

−34

IMD

−33

[1]

shldr

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BLF881_1012 Summary of contents

Page 1

BLF881; BLF881S UHF power LDMOS transistor Rev. 3 — 7 December 2010 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF ...

Page 2

NXP Semiconductors High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pin ...

Page 3

NXP Semiconductors 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) [1] R th(j-c) 6. Characteristics Table ...

Page 4

NXP Semiconductors Table 7. RF characteristics …continued ° unless otherwise specified. h Symbol Parameter DVB-T (8k OFDM) V drain-source voltage DS I quiescent drain current Dq P average output power L(AV) G power gain p η ...

Page 5

NXP Semiconductors 7. Application information 7.1 Narrowband RF figures 7.1.1 CW Fig 2. 7.1.2 2-Tone (dB η 0.5 ...

Page 6

NXP Semiconductors 7.1.3 DVB (dB η 0.5 A; measured in a common-source DS Dq narrowband 860 MHz test circuit. ...

Page 7

NXP Semiconductors 7.2 Broadband RF figures 7.2.1 DVB-T 9.0 PAR (dB) 8.0 7.0 6.0 400 500 600 0. common-source broadband test circuit as described in Section 8. Fig 7. DVB-T ...

Page 8

NXP Semiconductors 7.4 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 9. BLF881_BLF881S Product data sheet (1) (2) (3) ...

Page 9

NXP Semiconductors 8. Test information Table 8. List of components For test circuit, see Figure 10, Figure 11 Component Description C1, C2 multilayer ceramic chip capacitor C3, C4 multilayer ceramic chip capacitor C5 multilayer ceramic chip capacitor C6 multilayer ceramic ...

Page 10

L23 C25 L22 C24 See Table 8 for a list of components. Fig 10. Class-AB common-source broadband amplifier C11 C12 C27 C26 C20 C1 C3 L21 L20 L1 L2 C23 C22 C21 ...

Page 11

NXP Semiconductors 40 mm Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS ...

Page 12

NXP Semiconductors C26 L23 C25 C24 C23 L23 See Table 8 for a list of components. Fig 12. Component layout for class-AB common source amplifier BLF881_BLF881S Product data sheet R2 C27 L6 R1 C20 C22 L20 L21 C21 L7 All ...

Page 13

NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 4.67 5.59 0.15 9.25 mm 3.94 ...

Page 14

NXP Semiconductors Earless LDMOST ceramic package; 2 leads H Dimensions (1) Unit max 4.67 5.59 0.15 9.25 mm nom min 3.94 5.33 0.10 9.04 max 0.184 0.22 0.006 0.364 inches nom min 0.155 0.21 0.004 0.356 ...

Page 15

NXP Semiconductors 10. Abbreviations Table 9. Acronym CW CCDF DVB DVB-T ESD HF IMD3 LDMOS LDMOST OFDM PAR PEP RF TTF UHF VSWR 11. Revision history Table 10. Revision history Document ID Release date BLF881_BLF881S v.3 20101207 • Modifications: Table ...

Page 16

NXP Semiconductors 12. Legal information 12.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...

Page 17

NXP Semiconductors Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use neither qualified nor tested in accordance with automotive testing ...

Page 18

NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . ...

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