BF545C T/R Philips, BF545C T/R Datasheet

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BF545C T/R

Manufacturer Part Number
BF545C T/R
Description
transistors, chan, sot, Semiconductors and Actives, Transistors, channel, Discretes (diodes, transistors, thyristors ...
Manufacturer
Philips
Datasheet
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
Table 1:
Symbol Parameter
V
V
I
P
DSS
y
DS
GSoff
tot
fs
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors
Rev. 03 — 5 August 2004
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage (max. 2.2 V for BF545A).
Impedance converters in e.g. electret microphones and infra-red detectors
VHF amplifiers in oscillators and mixers.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
drain-source voltage
gate-source cut-off
voltage
drain current
total power dissipation
forward transfer
admittance
Quick reference data
Conditions
I
V
T
V
D
amb
GS
GS
BF545A
BF545B
BF545C
= 1 A; V
= 0 V; V
= 0 V; V
25 C
DS
DS
DS
= 15 V
= 15 V
= 15 V
Min
-
2
6
12
-
3
Product data sheet
0.4
Typ
-
-
-
-
-
-
-
Max
6.5
15
25
250
6.5
30
7.8
Unit
V
V
mA
mA
mA
mW
mS

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BF545C T/R Summary of contents

Page 1

BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore ...

Page 2

... Description source (s) drain (d) gate (g) Ordering information Package Name Description - plastic surface mounted package; 3 leads Marking Rev. 03 — 5 August 2004 Simplified outline Symbol SOT23 [1] Marking code 20* 21* 22* © Koninklijke Philips Electronics N.V. 2004. All rights reserved sym054 Version SOT23 ...

Page 3

... Parameter thermal resistance from junction to ambient 2 . Rev. 03 — 5 August 2004 Min - - - - [ amb 65 - mbb688 100 150 200 amb Conditions Typ [1] 500 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Max Unit 250 mW +150 C 150 C Unit K ...

Page 4

... 125 Rev. 03 — 5 August 2004 Min Typ Max Unit 0.4 - 2.2 V 1.6 - 3.8 V 3.2 - 7.8 V 0 0.5 1000 100 6 © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 5

... Rev. 03 — 5 August 2004 Min Typ Max - 300 - - 1 mbb466 GSoff = © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Unit ( ...

Page 6

... V (V) DS BF545A V DS Fig 7. Typical input characteristics. Rev. 03 — 5 August 2004 mbb464 GSoff = 100 mV mbb463 ( © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 7

... N-channel silicon junction field-effect transistors mbb460 (mA) (1) 12 (2) (3) 8 (4) ( (V) DS BF545B V DS Fig 9. Typical input characteristics. Rev. 03 — 5 August 2004 mbb459 ( © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 8

... N-channel silicon junction field-effect transistors mbb457 (mA) (1) 20 (2) (3) 10 (4) (5) ( (V) DS BF545C V DS Fig 11. Typical input characteristics. Rev. 03 — 5 August 2004 mbb456 ( © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 9

... voltage; typical values. ( only for BF545B and BF545C mA mA 0.1 mA GSS voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. mbb458 0 (V) mbb454 (1) ( ...

Page 10

... Rev. 03 — 5 August 2004 1 0.8 0.6 0.4 0 gate-source voltage; typical values ( (MHz mA amb . values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. mbb452 (V) GS mbb468 ...

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... C. Rev. 03 — 5 August 2004 (MHz mA amb typical values. mbb471 (1) ( (MHz) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. mbb470 ...

Page 12

... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ TO-236AB Rev. 03 — 5 August 2004 N-channel silicon junction field-effect transistors detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT23 ISSUE DATE 97-02-28 99-09- ...

Page 13

... BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Data sheet status Change notice Product data sheet - Table 4. Product specification - Rev. 03 — 5 August 2004 Order number Supersedes 9397 750 13391 BF545A-B-C_2 - - © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 14

... Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. ...

Page 15

... Contact information . . . . . . . . . . . . . . . . . . . . 14 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...

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