BF545C T/R Philips, BF545C T/R Datasheet - Page 5

• Manufacturer Part Number: BF545C T/R
• Description: transistors, chan, sot, Semiconductors and Actives, Transistors, channel, Discretes (diodes, transistors, thyristors ...
• Manufacturer: Philips

Philips Semiconductors
8. Dynamic characteristics
Table 8:
T
9397 750 13391
Product data sheet
Symbol
C
C
g
g
g
g
amb
Fig 2. Drain current as a function of gate-source
is
fs
rs
os
iss
rss
(mA)
I
= 25 C unless otherwise specified.
DSS
30
20
10
0
V
cut-off voltage; typical values.
0
DS
Parameter
input capacitance
reverse transfer capacitance
common source input
conductance
common source transfer
conductance
common source reverse
conductance
common source output
conductance
Dynamic characteristics
= 15 V; T
2
j
= 25 C.
4
6
V
GSoff
mbb467
Conditions
V
V
V
V
V
V
(V)
DS
DS
DS
DS
DS
DS
V
V
V
V
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
GS
GS
GS
GS
Rev. 03 — 5 August 2004
= 15 V; f = 1 MHz
= 15 V; f = 1 MHz
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
8
= 10 V
= 0 V
= 10 V
= 0 V
D
D
D
D
= 1 mA
= 1 mA
= 1 mA
= 1 mA
BF545A; BF545B; BF545C
Fig 3. Forward transfer admittance as a function of
N-channel silicon junction field-effect transistors
(mS)
Y
fs
5.5
4.5
6
5
4
V
gate-source cut-off voltage; typical values.
0
DS
= 15 V; V
2
GS
Min
-
-
-
-
-
-
-
-
-
-
-
-
= 0 V; T
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4
j
= 25 C.
Typ
1.7
3
0.8
0.9
15
300
2
1.8
30
60
6
40
6
V
Max
-
-
-
-
-
-
-
-
-
-
-
-
GSoff
mbb466
(V)
8
Unit
pF
pF
pF
pF
mS
mS
S
S
S
S
S
S
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