GLS29EE512-70-4C-NHE-T Greenliant, GLS29EE512-70-4C-NHE-T Datasheet

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GLS29EE512-70-4C-NHE-T

Manufacturer Part Number
GLS29EE512-70-4C-NHE-T
Description
gls29ee series 512 kbit (64 k x 8) 5 v 70 ns page-write eeprom - plcc-32...
Manufacturer
Greenliant
Datasheet
FEATURES:
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
• Latched Address and Data
PRODUCT DESCRIPTION
The GLS29EE512 is a 64K x8 CMOS, Page-Write
EEPROM manufactured with high-performance Super-
Flash technology. The split-gate cell design and thick-
oxide tunneling injector attain better reliability and manu-
facturability compared with alternate approaches. The
GLS29EE512 writes with a single power supply. Internal
Erase/Program is transparent to the user. The
GLS29EE512 conforms to JEDEC standard pin assign-
ments for byte-wide memories.
Featuring
GLS29EE512 provides a typical Byte-Write time of 39
µsec. The entire memory, i.e., 64 KByte, can be written
page-by-page in as little as 2.5 seconds, when using
interface features such as Toggle Bit or Data# Polling to
indicate the completion of a Write cycle. To protect
against inadvertent write, the GLS29EE512 have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum
of applications, the GLS29EE512 is offered with a guar-
anteed Page-Write endurance of 10,000 cycles. Data
retention is rated at greater than 100 years.
©2010 Greenliant Systems, Ltd.
– 4.5-5.5V for GLS29EE512
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical)
– Standby Current: 10 µA (typical)
– 128 Bytes per Page, 512 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 2.5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
– 4.5-5.5V operation: 70 ns
512 Kbit (64K x8) Page-Write EEPROM
high
performance
GLS29EE512512Kb (x8) Page-Write, Small-Sector flash memories
GLS29EE512
Page-Write,
www.greenliant.com
the
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• Product Identification can be accessed via
• TTL I/O Compatibility
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
The GLS29EE512 is suited for applications that require
convenient and economical updating of program, config-
uration, or data memory. For all system applications, the
GLS29EE512 significantly improves performance and
reliability, while lowering power consumption. The
GLS29EE512 improves flexibility while lowering the cost
for program, data, and configuration storage applica-
tions.
To meet high density, surface mount requirements, the
GLS29EE512 is offered in 32-lead PLCC and 32-lead
TSOP packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 1, 2, and 3 for pin assignments.
Device Operation
The Greenliant Page-Write EEPROM offers in-circuit elec-
trical write capability. The GLS29EE512 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The GLS29EE512 has industry stan-
dard optional Software Data Protection, which Greenliant
recommends always to be enabled. The GLS29EE512 is
compatible with industry standard EEPROM pinouts and
functionality.
– Internal V
– Toggle Bit
– Data# Polling
Software Operation
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 20mm)
– 32-pin PDIP
PP
Generation
S71060-10-000
Data Sheet
05/10

Related parts for GLS29EE512-70-4C-NHE-T

GLS29EE512-70-4C-NHE-T Summary of contents

Page 1

... GLS29EE512 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the GLS29EE512 is offered with a guar- anteed Page-Write endurance of 10,000 cycles. Data retention is rated at greater than 100 years. ©2010 Greenliant Systems, Ltd. ...

Page 2

... Software Data Protection. Step 2 is the byte-load cycle to a page buffer of the GLS29EE512. Steps 1 and 2 use the same timing for both operations. Step internally controlled Write cycle for writing the data loaded in the page buffer into the memory array for nonvolatile storage ...

Page 3

... Write cycle, otherwise the rejec- tion is valid. Data# Polling ( When the GLS29EE512 is in the internal Write cycle, any attempt to read DQ of the last byte loaded during the byte- 7 load cycle will receive the complement of the true data. ...

Page 4

... Single power supply reprogrammable nonvolatile memo- ries may be unintentionally altered. Greenliant strongly rec- ommends that Software Data Protection (SDP) always be enabled. The GLS29EE512 should be programmed using the SDP command sequence. Greenliant recommends the SDP Disable Command Sequence not be issued to the device prior to writing. ...

Page 5

... Kbit Page-Write EEPROM GLS29EE512 FIGURE SSIGNMENTS FOR A11 A9 A8 A13 A14 NC WE A15 A12 FIGURE SSIGNMENTS FOR ©2010 Greenliant Systems, Ltd 32-lead PLCC ...

Page 6

... A14 A13 32-pin PDIP A11 Top View OE A10 CE DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 DQ3 1060 32-pdip PH P3.0 32- PDIP PIN 6 GLS29EE512 S71060-10-000 05/10 ...

Page 7

... X can but no other value Device ID = 5DH for GLS29EE512 ©2010 Greenliant Systems, Ltd. Functions To provide memory addresses. Row addresses define a page for a Write cycle. Column Addresses are toggled to load page data To output data during Read cycles and receive input data during Write cycles. ...

Page 8

... Greenliant Manufacturer’ BFH, is read with GLS29EE512 Device ID = 5DH, is read with A 6. Alternate six-byte Software Product ID Command Code Note: This product supports both the JEDEC standard three-byte command code sequence and Greenliant’s original six-byte command code sequence. For new designs, Greenliant recommends that the three-byte command code sequence be used. ...

Page 9

... C capable in both non-Pb and with-Pb solder versions. ° C for 10 seconds; please consult the factory for the latest information 4.5-5.5V 4.5-5.5V = 100 4.5-5.5V GLS29EE512 FOR DD Limits Min Max Units Test Conditions Address input ...

Page 10

... This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2010 Greenliant Systems, Ltd. 512 Kbit Page-Write EEPROM Minimum Specification 10,000 100 100 GLS29EE512 ARAMETERS FOR P IMING ARAMETERS 10 GLS29EE512 Units Test Method Cycles JEDEC Standard A117 Years JEDEC Standard A103 mA JEDEC Standard 78 T6.5 1060 Min Max Units ...

Page 11

... Kbit Page-Write EEPROM GLS29EE512 ADDRESS A 15-0 CE# OE WE# HIGH-Z DQ 7-0 FIGURE EAD YCLE IMING Three-Byte Sequence for Enabling SDP ADDRESS A 5555 2AAA 15-0 CE# OE# WE 7-0 SW0 SW1 SW2 FIGURE 5: WE# C ONTROLLED ©2010 Greenliant Systems, Ltd OLZ ...

Page 12

... CP T BLC T T OEH OES DATA VALID T SW2 DS BYTE 0 BYTE AGE RITE YCLE IMING IAGRAM T CE OEH BLCO D IAGRAM 12 GLS29EE512 T BLCO T WC BYTE 127 T OES D# D 1060 F07.0 S71060-10-000 1060 F06.0 05/10 ...

Page 13

... Kbit Page-Write EEPROM GLS29EE512 ADDRESS A 15-0 CE# T OEH OE# WE FIGURE OGGLE IT IMING ADDRESS A 5555 14 7-0 CE# OE WE# SW0 FIGURE OFTWARE ATA ©2010 Greenliant Systems, Ltd BLCO D IAGRAM Six-Byte Sequence for Disabling Software Data Protection ...

Page 14

... Six-Byte Code for Software Chip-Erase 2AAA 5555 5555 2AAA BLC SW1 SW2 SW3 SW4 T D RASE IMING IAGRAM 5555 0000 IDA T BLC SW1 SW2 R EAD 14 GLS29EE512 T SCE 5555 10 T BLCO SW5 1060 F10.0 0001 5D 1060 F11.0 S71060-10-000 05/10 ...

Page 15

... Kbit Page-Write EEPROM GLS29EE512 Three-Byte Sequence for Software ID Exit and Reset ADDRESS A 5555 14 7-0 CE# OE WE# SW0 FIGURE 12 OFTWARE XIT AND ©2010 Greenliant Systems, Ltd. 2AAA 5555 IDA T BLC SW1 SW2 R ESET 15 Data Sheet 1060 F12.0 S71060-10-000 ...

Page 16

... V HT REFERENCE POINTS V LT (0.4 V) for a logic “0”. Measurement reference points for ILT (0.8 V). Input rise and fall times (10 EFERENCE AVEFORMS TO TESTER LOW 16 GLS29EE512 V HT OUTPUT V LT 1060 F13.0  90%) are <10 ns. Note Test HT HIGH Test LT LOW ...

Page 17

... Kbit Page-Write EEPROM GLS29EE512 See Figure 17 FIGURE 15 RITE LGORITHM ©2010 Greenliant Systems, Ltd. Start Software Data Protect Write Command Set Page Address Set Byte Address = 0 Load Byte Data Increment Byte Address By 1 Byte No Address = 128? Yes Wait T BLCO Wait for end of ...

Page 18

... Kbit Page-Write EEPROM Toggle Bit Page-Write Initiated Read a byte from page Read same byte No Does DQ 6 match? Yes Write Completed 18 GLS29EE512 Data# Polling Page-Write Initiated Read DQ 7 (Data for last byte loaded true data? Yes Write Completed 1060 F16.0 S71060-10-000 ...

Page 19

... Kbit Page-Write EEPROM GLS29EE512 Software Data Protect Enable Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: A0H Address: 5555H Load 0 to 128 Bytes of page data Wait T BLCO Wait T WC SDP Enabled ©2010 Greenliant Systems, Ltd. ...

Page 20

... Kbit Page-Write EEPROM F ROTECTION LOWCHARTS Software Product ID Exit & Reset Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: F0H Address: 5555H Pause 10 µs Return to normal C F OMMAND LOWCHARTS 20 GLS29EE512 operation 1060 F18.0 S71060-10-000 05/10 ...

Page 21

... Kbit Page-Write EEPROM GLS29EE512 FIGURE 19 OFTWARE HIP ©2010 Greenliant Systems, Ltd. Software Chip-Erase Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 80H Address: 5555H Write data: AAH Address: 5555H Write data: 55H ...

Page 22

... GLS 29 EE 512 - XXXX - XXX Valid combinations for GLS29EE512 GLS29EE512-70-4C-NH GLS29EE512-70-4C-EH GLS29EE512-70-4C-NHE GLS29EE512-70-4C-EHE GLS29EE512-70-4I-NH GLS29EE512-70-4I-EH GLS29EE512-70-4I-NHE GLS29EE512-70-4I-EHE Note: Valid combinations are those products in mass production or will be in mass production. Consult your Greenliant sales representative to confirm availability of valid combinations and to determine availability of new combinations. ...

Page 23

... Kbit Page-Write EEPROM GLS29EE512 PACKAGING DIAGRAMS TOP VIEW .495 .485 .453 Optional .447 Pin #1 .048 Identifier .042 .042 .048 .595 .553 .585 .547 .050 BSC Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). ...

Page 24

... LEAD HIN MALL UTLINE REENLIANT ACKAGE ODE ©2010 Greenliant Systems, Ltd. 512 Kbit Page-Write EEPROM 18.50 18.30 20.20 19.80 (TSOP ACKAGE GLS29EE512 1.05 0.95 0.50 BSC 8.10 0.27 7.90 0.17 0.15 0.05 DETAIL 1.20 max. 0.70 0.50 1mm 32-tsop-EH-7 S71060-10-000 0˚- 5˚ 05/10 ...

Page 25

... Kbit Page-Write EEPROM GLS29EE512 Pin #1 Identifier .075 .065 Base Plane Seating Plane .050 .015 .080 .065 .070 .045 Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. ...

Page 26

... These specifications are subject to change without notice. SSF is a trademark and SuperFlash is a registered trademark of Silicon Storage Technology, Inc., a wholly owned subsidiary of Microchip Technology Inc. ©2010 Greenliant Systems, Ltd. 512 Kbit Page-Write EEPROM Description 26 GLS29EE512 Date May 2002 Mar 2003 Nov 2003 Sep 2005 May 2010 ...

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