BD18IC0WHFV-GTR ROHM Semiconductor, BD18IC0WHFV-GTR Datasheet - Page 15

• Manufacturer Part Number: BD18IC0WHFV-GTR
• Description: Low Dropout Controllers - LDO LDO Reg Pos 1.8V 1A
• Manufacturer: ROHM Semiconductor

Specifications of BD18IC0WHFV-GTR

• Rohs: yes
• Input Voltage Max: 5.5 V
• Output Voltage: 1.8 V
• Output Current: 1 A
• Load Regulation: 75 mV
• Output Type: Fixed
• Number Of Outputs: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: HVSOF-6
• Input Voltage Min: 2.4 V
• Maximum Power Dissipation: 2110 mW
• Minimum Operating Temperature: - 25 C

●Power Dissipation
TSZ22111･15･001
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© 2012 ROHM Co., Ltd. All rights reserved.
BDxxIC0WEFJ / BDxxIC0WHFV
◎HTSOP-J8
◎HVSOF6
1.0
3.0
2.0
4.0
0
4.0
3.0
2.0
1.0
0.0
0
0
①0.85W
②1.4W
⑤3.76W
④2.11W
③1.10W
②0.82W
①0.50W
①0.50W
③1.7W
25
25
Ambient Tempera ture: Ta [℃]
Ambient Temperature :Ta [℃]
50
50
周囲温度:Ta [℃]
75
75
100
100
125
15/23
125
150
150
Measure condition: mounted on a ROHM board,
Substrate size: 70mm × 70mm × 1.6mm
・ Solder the substrate and package reverse
① IC only
② 1-layer（copper foil are :0mm×0mm）
③ 2-layer（copper foil are :15mm×15mm）
④ 2-layer（copper foil are :70mm×70mm）
⑤ 4-layer（copper foil are :70mm×70mm）
Measure condition: mounted on a ROHM board,
Substrate size: 70mm × 70mm × 1.6mm
・ Solder the substrate and package reverse
① single-layer(copper foil are :2%)
② single-layer(copper foil are :18%)
③single-layer(copper foil are :51%)
exposure heat radiation part
θj-a=249.5℃/W
θj-a=153.2℃/W
θj-a=113.6℃/W
θj-a=59.2℃/W
θj-a=33.3℃/W
exposure heat radiation part
θj-a=147.1℃/W
θj-a=89.3℃/W
θj-a=73.5℃/W
(Substrate with thermal via)
TSZ02201-0R6R0A600160-1-2
(Substrate with thermal via)
6.July.2012 Rev.001
Datasheet