BD18IC0WHFV-GTR ROHM Semiconductor, BD18IC0WHFV-GTR Datasheet - Page 16

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BD18IC0WHFV-GTR

Manufacturer Part Number
BD18IC0WHFV-GTR
Description
Low Dropout Controllers - LDO LDO Reg Pos 1.8V 1A
Manufacturer
ROHM Semiconductor
Datasheet

Specifications of BD18IC0WHFV-GTR

Rohs
yes
Input Voltage Max
5.5 V
Output Voltage
1.8 V
Output Current
1 A
Load Regulation
75 mV
Output Type
Fixed
Number Of Outputs
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
HVSOF-6
Input Voltage Min
2.4 V
Maximum Power Dissipation
2110 mW
Minimum Operating Temperature
- 25 C
Most of the heat loss that occurs in the BDxxIC0W series are generated from the output Pch FET. Power loss is determined by
the total V
conditions in relation to the heat dissipation characteristics of the V
may vary substantially depending on the substrate employed (due to the power package incorporated in the
TSZ22111・15・001
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BDxxIC0WEFJ / BDxxIC0WHFV
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
Chip junction temperature can be determined as follows:
BDxxIC0W series make certain to factor conditions such as substrate size into the thermal design.
1. Ambient temperature Ta can be no higher than 85℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Power consumption [W] = Input voltage (V
Calculation based on ambient temperature (Ta)
Tj=Ta+θj-a×P
<Reference values>
Example) When V
CC
θj-a:HTSOP-J8 153.2℃/W
-V
O
voltage and output current. Be sure to confirm the system input and output voltage and the output current
CC
=3.3V, V
Power consumption [W] =
113.6℃/W
59.2℃/W
33.3℃/W
O
=2.5V, I
1-layer substrate (copper foil density 0mm×0mm)
2-layer substrate (copper foil density 15mm×15mm)
2-layer substrate (copper foil density 70mm×70mm)
4-layer substrate (copper foil density 70mm×70mm)
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)
O
(Ave) = 0.1A
CC
) - Output voltage (V
=0.08[W]
3.3V - 2.5V
16/23
CC
and V
O
×0.1A
) ×I
O
in the design. Bearing in mind that heat dissipation
O
(Ave)
TSZ02201-0R6R0A600160-1-2
6.July.2012 Rev.001
Datasheet

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