CY7C1041CV33-10BAXET Cypress Semiconductor, CY7C1041CV33-10BAXET Datasheet - Page 9

• Manufacturer Part Number: CY7C1041CV33-10BAXET
• Description: SRAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1041CV33-10BAXET

• Rohs: yes
• Memory Size: 4 Mbit
• Access Time: 10 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3 V
• Maximum Operating Current: 90 mA
• Mounting Style: SMD/SMT
• Package / Case: FBGA-48
• Memory Type: SRAM Module
• Factory Pack Quantity: 2000

Switching Waveforms
Notes
Document Number: 001-67307 Rev. *B
14. Data IO is high impedance if OE, BHE, and/or BLE = V
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
ADDRESS
ADDRESS
BHE, BLE
BHE, BLE
DATA IO
DATA IO
WE
WE
CE
CE
(continued)
t
SA
t
SA
Figure 7. Write Cycle No. 2 (BLE or BHE Controlled)
Figure 6. Write Cycle No. 1 (CE Controlled)
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
t
PWE
SCE
SCE
t
PWE
t
BW
t
SD
t
SD
CY7C1041CV33 Automotive
[14, 15]
t
HD
t
HD
t
HA
t
HA
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