CAT1163WI-45-T3 ON Semiconductor, CAT1163WI-45-T3 Datasheet - Page 3

• Manufacturer Part Number: CAT1163WI-45-T3
• Description: Supervisory Circuits CPU Supervisor with 16K EEPROM
• Manufacturer: ON Semiconductor

Specifications of CAT1163WI-45-T3

• Product Category: Supervisory Circuits
• Rohs: yes
• Number Of Voltages Monitored: 1
• Monitored Voltage: 3 V, 3.3 V, 5 V
• Undervoltage Threshold: 4.5 V
• Overvoltage Threshold: 4.75 V
• Output Type: Active High, Active Low, Open Drain
• Manual Reset: Resettable
• Watchdog: Watchdog
• Battery Backup Switching: No Backup
• Power-up Reset Delay (typ): 270 ms
• Supply Voltage - Max: 6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Wide
• Chip Enable Signals: No
• Maximum Power Dissipation: 1000 mW
• Minimum Operating Temperature: - 40 C
• Power Fail Detection: No
• Supply Current (typ): 3000 uA
• Supply Voltage - Min: 2.7 V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum
2. Output shorted for no more than one second. No more than one output shorted at a time.
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from –1 V to V
Temperature Under Bias
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
V
Package Power Dissipation Capability (T
Lead Soldering Temperature (10 seconds)
Output Short Circuit Current (Note 2)
I
Table 2. ABSOLUTE MAXIMUM RATINGS
LTH
Table 3. RELIABILITY CHARACTERISTICS
Table 4. D.C. OPERATING CHARACTERISTICS
V
Table 5. CAPACITANCE
T
CC
N
DC voltage on output pins is V
V
A
CC
T
C
C
END
ZAP
DR
= 25°C, f = 1.0 MHz, V
I/O
(Notes 3 & 4)
IN
with Respect to Ground
Symbol
Symbol
Symbol
= 2.7 V to 6.0 V, unless otherwise specified.
V
(Note 3)
(Note 3)
(Note 3)
I
V
I
I
V
(Note 3)
(Note 3)
CC
SB
I
OL1
LO
LI
IH
IL
Endurance
Data Retention
ESD Susceptibility
Latch−Up
Power Supply Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage (SDA)
Input/Output Capacitance (SDA)
Input Capacitance (SCL)
CC
Parameter
= 5 V
Parameter
CC
Parameters
+0.5 V, which may overshoot to V
A
= 25°C)
Test
MIL−STD−883, Test Method 1033
MIL−STD−883, Test Method 1008
MIL−STD−883, Test Method 3015
f
V
V
V
V
I
SCL
OL
SPECIFICATIONS
CC
CC
IN
IN
http://onsemi.com
Reference Test Method
= 3 mA, V
= GND or V
= GND or V
JEDEC Standard 17
= 100 kHz
= 3.3 V
= 5 V
Test Conditions
3
CC
CC
CC
CC
+2.0 V for periods of less than 20 ns.
= 3.0 V
V
V
I/O
IN
= 0 V
= 0 V
Test Conditions
V
CC
−2.0 to V
1,000,000
Min
−1
–55 to +125
–65 to +150
x 0.7
−2.0 to 7.0
2000
Min
100
100
Ratings
CC
300
100
1.0
+1 V.
CC
Typ
+ 2.0
Max
V
V
CC
CC
Max
Max
0.4
40
50
10
3
2
8
6
+ 0.5
x 0.3
Cycles/Byte
Units
Years
Volts
mA
Units
Units
Units
mA
°C
°C
°C
mA
W
mA
mA
mA
mA
V
V
pF
pF
V
V
V