M24C16-RDW6TP STMicroelectronics, M24C16-RDW6TP Datasheet - Page 20

IC EEPROM 16KBIT 400KHZ 8TSSOP

M24C16-RDW6TP

Manufacturer Part Number
M24C16-RDW6TP
Description
IC EEPROM 16KBIT 400KHZ 8TSSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24C16-RDW6TP

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
16K (2K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8639-2
M24C16-RDW6TP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M24C16-RDW6TP
Manufacturer:
STMicroelectronics
Quantity:
13 600
Part Number:
M24C16-RDW6TP
Manufacturer:
ST
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Part Number:
M24C16-RDW6TPSTB
Manufacturer:
ST
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Part Number:
M24C16-RDW6TPTTA
Manufacturer:
ST
0
DC and AC parameters
20/39
Table 9.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Table 10.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Symbol
Symbol
I
V
I
V
I
V
I
CC1
V
V
I
I
completion of the internal write cycle t
CC1
V
completion of the internal write cycle t
I
LO
CC
I
CC
LO
LI
OL
OL
IH
LI
IL
IH
IL
Input leakage current
(SCL, SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
Input leakage current (SCL,
SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
DC characteristics (M24Cxx-W, device grade 6)
DC characteristics (M24Cxx-W, device grade 3)
Parameter
Parameter
Doc ID 5067 Rev 16
W
W
V
Test conditions (in addition to those in
Device not selected
SDA in Hi-Z, external voltage applied on
IN
(t
(t
W
I
W
Device not selected
(in addition to those in
Device not selected
OL
= V
I
OL
is triggered by the correct decoding of a write command).
is triggered by the correct decoding of a write command).
I
SDA in Hi-Z, external voltage
applied on SDA: V
OL
I
V
= 2.1 mA when V
OL
V
SS
= 2.1 mA when V
IN
V
V
CC
= 3 mA when V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
V
for 2.5 V < V
CC
CC
= 3 mA when V
or V
= V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
or V
CC
or V
M24C16, M24C08, M24C04, M24C02, M24C01
= 2.5 V, f
Test condition
SDA: V
Standby mode
= 5 V, f
= 2.5 V, f
SS
CC
= 5 V, f
CC
CC
or V
, V
Table
, device in Standby mode
, V
CC
C
SS
(1)
CC
C
CC
c
= 400 kHz
c
CC
= 400 kHz
= 400 kHz
, V
= 2.5 V
or V
(1)
(1)
6)
, device in
= 5 V
= 400 kHz
CC
SS
CC
CC
IN
, V
CC
, V
CC
5.5 V
= 2.5 V or
or V
= 5.5 V
= V
Table
IN
IN
= 2.5 V or
= 5.5 V
= V
= V
SS
CC
SS
SS
or V
6)
CC
0.7V
–0.45
Min.
,
0.7V
–0.45 0.3V
CC
Min.
CC
0.3V
V
Max.
CC
± 2
± 2
0.4
V
3
3
5
2
Max. Unit
CC
± 2
± 2
0.4
+1
CC
2
1
1
+1
CC
Unit
mA
mA
µA
µA
µA
µA
mA
mA
V
V
V
µA
µA
µA
V
V
V

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