CY7C1021BNV33L-15ZXI Cypress Semiconductor Corp, CY7C1021BNV33L-15ZXI Datasheet

IC SRAM 1MBIT 15NS 44TSOP

CY7C1021BNV33L-15ZXI

Manufacturer Part Number
CY7C1021BNV33L-15ZXI
Description
IC SRAM 1MBIT 15NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr

Specifications of CY7C1021BNV33L-15ZXI

Memory Size
1M (64K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
15ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
15 ns
Supply Voltage (max)
3.63 V
Supply Voltage (min)
2.97 V
Maximum Operating Current
160 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Density
1Mb
Access Time (max)
15ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Supply Current
160mA
Operating Supply Voltage (min)
2.97V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
64K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1021BNV33L-15ZXI
Manufacturer:
CYPRESS
Quantity:
1 000
64 K × 16 Static RAM
Features
Cypress Semiconductor Corporation
Document #: 001-06433 Rev. *C
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
3.3 V operation (3.0 V–3.6 V)
High speed
CMOS for optimum speed/power
Low Active Power
Low CMOS Standby Power
Automatic power-down when deselected
Independent control of upper and lower bits
Available in 44-pin TSOP II and 400-mil SOJ
Available in a 48-ball Mini BGA package
t
576 mW (max)
1.80 mW (max)
AA
= 15 ns
198 Champion Court
Functional Description
The CY7C1021BNV33 is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power-down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is
LOW, then data from I/O pins (I/O
the location specified on the address pins (A
Byte High Enable (BHE) is LOW, then data from I/O pins (I/O
through I/O
pins (A
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins will
appear on I/O
data from memory will appear on I/O
at the back of this data sheet for a complete description of read
and write modes.
The input/output pins (I/O
high-impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW,
and WE LOW).
The CY7C1021BNV33 is available in 400-mil-wide SOJ,
standard 44-pin TSOP Type II, and 48-ball mini BGA packages.
0
through A
15
San Jose
) is written into the location specified on the address
0
to I/O
15
64 K × 16 Static RAM
).
7
,
. If Byte High Enable (BHE) is LOW, then
CA 95134-1709
0
through I/O
[1]
CY7C1021BNV33
0
8
through I/O
to I/O
Revised March 8, 2011
15
15 .
) are placed in a
See the truth table
0
7
through A
), is written into
408-943-2600
15
). If
8
[+] Feedback

Related parts for CY7C1021BNV33L-15ZXI

CY7C1021BNV33L-15ZXI Summary of contents

Page 1

... Available in a 48-ball Mini BGA package ■ Note 1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com. Cypress Semiconductor Corporation Document #: 001-06433 Rev. *C Functional Description The CY7C1021BNV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits ...

Page 2

Logic Block Diagram DATA IN DRIVERS COLUMN DECODER Selection Guide Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Document ...

Page 3

Contents Pin Configurations ........................................................... 4 Maximum Ratings ............................................................. 5 Operating Range ............................................................... 5 Electrical Characteristics ................................................. 5 Capacitance ...................................................................... 5 AC Test Loads and Waveforms ....................................... 6 Switching Characteristics ................................................ 7 Data Retention Characteristics ....................................... 8 Data Retention Waveform ................................................ ...

Page 4

Pin Configurations Document #: 001-06433 Rev. *C SOJ / TSOP II Top View BHE ...

Page 5

Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage Temperature ............................... –65 °C to +150 °C Ambient Temperature with Power Applied .......................................... –55 °C to +125 °C [2] Supply Voltage ...

Page 6

AC Test Loads and Waveforms R 317 3.3 V 3.3 V OUTPUT OUTPUT 351 INCLUDING INCLUDING JIG AND JIG AND SCOPE SCOPE (a) OUTPUT Equivalent to: THÉVENIN EQUIVALENT Document #: 001-06433 Rev 317 3.0 V ...

Page 7

... At any given temperature and voltage condition The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write ...

Page 8

Data Retention Characteristics Over the Operating Range (L version only) Parameter Description V V for Data Retention Data Retention Current CCDR [9] t Chip Deselect to Data Retention Time CDR [10] t Operation Recovery Time R Data ...

Page 9

Switching Waveforms [11, 12] Read Cycle No. 1 ADDRESS DATA OUT PREVIOUS DATA VALID Read Cycle No. 2 (OE Controlled) ADDRESS CE t ACE OE t DOE BHE, BLE t LZOE t DBE t LZBE HIGH IMPEDANCE DATA OUT t ...

Page 10

Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled) ADDRESS BHE, BLE DATA I/O Write Cycle No. 2 (BLE or BHE Controlled) ADDRESS t SA BHE, BLE WE CE DATA I/O Notes 14. Data I/O is ...

Page 11

Switching Waveforms (continued) Write Cycle No. 2 (WE Controlled, OE LOW) ADDRESS BHE, BLE DATA I/O Truth Table BLE BHE I High ...

Page 12

... For a complete listing of all options, visit the Cypress website at and refer to the product summary page at Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Speed (ns) Ordering Code 15 CY7C1021BNV33L-15BAI CY7C1021BNV33L-15VXI CY7C1021BNV33L-15ZXI Ordering Code Definitions V33 L Please contact local sales representative regarding availability of these parts ...

Page 13

Package Diagrams Figure 1. 48-ball FBGA (7 mm × × 1.2 mm), 51-85096 Figure 2. 44-pin (400-Mil) Molded SOJ, 51-85082 Document #: 001-06433 Rev. *C CY7C1021BNV33 51-85096 *I 51-85082 *C Page [+] Feedback ...

Page 14

Package Diagrams (continued) Document #: 001-06433 Rev. *C Figure 3. 44-pin TSOP Type II, 51-85087 CY7C1021BNV33 51-85087 *C Page [+] Feedback ...

Page 15

... CE chip enable FBGA Fine-Pitch Ball Grid Array I/O input/output OE output enable SOJ small outline J-lead SRAM static random access memory TTL transistor-transistor logic TSOP thin small-outline package WE write enable Document #: 001-06433 Rev. *C CY7C1021BNV33 Document Conventions Units of Measure Symbol ...

Page 16

Document History Page Document Title: CY7C1021BNV33 64 K × 16 Static RAM Document Number: 001-06433 Orig. of REV. ECN NO. Issue Date Change ** 423847 See ECN *A 2897061 03/22/10 *B 3109897 12/14/2010 *C 3103073 03/08/2011 Document #: 001-06433 Rev. ...

Page 17

... Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement ...

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