M27C256B-15F1 STMicroelectronics, M27C256B-15F1 Datasheet - Page 14

• Manufacturer Part Number: M27C256B-15F1
• Description: IC EPROM 256KBIT 150NS 28CDIP
• Manufacturer: STMicroelectronics

Specifications of M27C256B-15F1

• Format - Memory: EPROMs
• Memory Type: UV EPROM
• Memory Size: 256K (32K x 8)
• Speed: 150ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-CDIP (0.600", 15.24mm) Window
• Capacitance, Input: 6 pF
• Capacitance, Output: 12 pF
• Current, Input, Leakage: ±10 μA (Read)
• Current, Operating: 30 mA (Read)
• Current, Output, Leakage: ±10 μA (Read)
• Current, Supply: 30 mA
• Density: 256K
• Organization: 32K×8
• Package Type: FDIP28W
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: 70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 150 ns
• Time, Fall: ≤20 ns
• Time, Programmable: 100 μA
• Time, Rise: ≤20 ns
• Voltage, Input, High: 6 V (Read)
• Voltage, Input, High Level: 2 V (Min.)
• Voltage, Input, Low: 0.8 V (Read)
• Voltage, Input, Low Level: 0.8 V (Typ.)
• Voltage, Output, High: 4.3 V (Read)
• Voltage, Output, Low: 0.4 V (Read)
• Voltage, Programmable: 12.75 V ± 0.25 V
• Voltage, Supply: 5 V
• Memory Configuration: 32K X 8
• Access Time: 150ns
• Supply Voltage Range: 4.5V To 5V
• Memory Case Style: DIP
• No. Of Pins: 28
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1650-5

DC and AC parameters
14/24
Figure 6.
Table 6.
1. Sampled only, not 100% tested.
2.
Table 7.
1. T
2. V
3. Maximum DC voltage on Output is V
Symbol
Symbol
V
I
I
V
V
C
I
I
CC1
CC2
I
V
IH
I
LO
CC
PP
C
(T
OH
OL
LI
OUT
A
IL
CC
(3)
IN
A
= 0 to 70°C, –40 to 85°C, –40 to 105°C or –40 to 125°C; V
= 25 °C, f = 1 MHz)
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby)
CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
Input Capacitance
Output Capacitance
AC testing load circuit
Capacitance
Read mode DC characteristics
Parameter
Parameter
C L = 30pF for High Speed
C L = 100pF for Standard
C L includes JIG capacitance
(1) (2)
DEVICE
UNDER
TEST
CC
+0.5V.
I
OUT
1.3V
E = V
Test Condition
0V V
E > V
I
0V V
PP
(1) (2)
OH
I
= 0mA, f = 5MHz
I
OL
V
OH
Test Condition
PP
E = V
and removed simultaneously or after V
1N914
3.3k
= –100µA
IL
= 2.1mA
CC
C L
= –1mA
OUT
V
, G = V
V
IN
= V
OUT
IN
– 0.2V
CC
IH
V
CC
= 0V
V
CC
= 0V
= 5V ± 5% or 5V ± 10%; V
CC
IL
,
OUT
AI01823B
V
CC
Min
–0.3
Min
3.6
– 0.7V
2
Max
PP
V
12
6
CC
Max
±10
±10
100
100
0.8
0.4
= V
30
PP
1
M27C256B
+ 1
.
CC
.
Unit
pF
pF
Unit
mA
mA
µA
µA
µA
µA
V
V
V
V
V