CY7C1041DV33-10VXI Cypress Semiconductor Corp, CY7C1041DV33-10VXI Datasheet - Page 9

• Manufacturer Part Number: CY7C1041DV33-10VXI
• Description: IC SRAM 4MBIT 10NS 44SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1041DV33-10VXI

• Memory Size: 4M (256K x 16)
• Package / Case: 44-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 90 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1977-5; CY7C1041DV33-10VXI

Switching Waveforms
Document Number: 38-05473 Rev. *I
Notes
26. Data I/O is high impedance if OE or BHE and BLE = V
27. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
28. During this period the I/Os are in the output state and input signals should not be applied.
ADDRESS
BHE, BLE
DATA I/O
BHE, BLE
DATAI/O
ADDRESS
CE
WE
OE
WE
CE
NOTE
28
Figure 8. Write Cycle No. 3 (WE Controlled, OE HIGH During Write)
(continued)
t
SA
t
t
SA
HZOE
Figure 7. Write Cycle No. 2 (BLE or BHE Controlled)
IH.
t
AW
t
AW
t
SCE
t
t
WC
WC
DATA
t
t
PWE
SD
t
t
BW
t
PWE
SCE
IN
VALID
t
SD
t
HD
t
HA
[26, 27]
t
HD
t
HA
CY7C1041DV33
Page 9 of 17
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