M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 93

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M58LT256JST8ZA6E

Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58LT256JST8ZA6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58LT256JST, M58LT256JSB
Figure 23. Block erase flowchart and pseudocode
1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
2. Any address within the bank can equally be used.
Address & D0h
SR4, SR5 = 1
Write 20h (2)
Read Status
Write Block
Register (2)
SR7 = 1
SR3 = 0
SR5 = 0
SR1 = 0
Start
End
YES
YES
NO
YES
YES
NO
NO
YES
NO
NO
Sequence Error (1)
Erase to Protected
Erase Error (1)
Block Error (1)
V PP Invalid
Command
Error (1)
if ( (status_register.SR5==1) )
/* erase error */
erase_command ( blockToErase ) {
if (status_register.SR3==1) /*V PP invalid error */
if ( (status_register.SR4==1) && (status_register.SR5==1) )
/* command sequence error */
if (status_register.SR1==1) /*program to protect block error */
}
do {
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
writeToFlash (blockToErase, 0x20) ;
writeToFlash (blockToErase, 0xD0) ;
/* Memory enters read status state after
the Erase Command */
} while (status_register.SR7== 0) ;
status_register=readFlash (blockToErase) ;
/* E or G must be toggled*/
/*see note (2) */
Flowcharts and pseudocodes
/* see note (2) */
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AI10976

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