CY62256NLL-55ZRXE Cypress Semiconductor Corp, CY62256NLL-55ZRXE Datasheet - Page 4

• Manufacturer Part Number: CY62256NLL-55ZRXE
• Description: IC SRAM 256KBIT 55NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62256NLL-55ZRXE

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 256K (32K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-06511 Rev. *A
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Note:
OUTPUT
Parameter
6. No input may exceed V
V
I
t
t
Parameter
CCDR
CDR
R
DR
[8]
Θ
Θ
INCLUDING
[8]
5V
JA
JC
JIG AND
SCOPE
V
100 pF
CE
CC
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
R1 1800Ω
for Data Retention
(a)
Description
CC
+ 0.5V.
[5]
R2
990Ω
Description
OUTPUT
INCLUDING
5V
L
LL-Comm’l
LL - Ind’l/Auto-A
LL - Auto-E
JIG AND
SCOPE
Still Air, soldered on a 4.25 x 1.125
inch, 4-layer printed circuit board
t
CDR
3.0V
5 pF
Test Conditions
(b)
R1 1800Ω
V
V
CC
IN
DATA RETENTION MODE
R2
990Ω
> V
= 2.0V, CE > V
CC
Conditions
V
DR
− 0.3V, or V
> 2V
Equivalent to:
GND
3.0V
CC
[6]
75.61
43.12
IN
DIP
< 5 ns
− 0.3V,
< 0.3V
OUTPUT
10%
SOIC
76.56
36.07
Min.
2.0
t
THÉ VENIN EQUIVALENT
RC
0
ALL INPUT PULSES
90%
3.0V
t
R
TSOP
93.89
24.64
Typ.
639Ω
0.1
0.1
0.1
2
[2]
CY62256N
RTSOP
93.89
24.64
Max.
50
10
10
90%
5
Page 4 of 13
10%
1.77V
< 5 ns
°C/W
°C/W
Unit
Unit
µA
µA
µA
µA
ns
ns
V
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