CY7C1024DV33-10BGXI Cypress Semiconductor Corp, CY7C1024DV33-10BGXI Datasheet - Page 3

• Manufacturer Part Number: CY7C1024DV33-10BGXI
• Description: IC SRAM 3MBIT 10NS 119BGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1024DV33-10BGXI

• Memory Size: 3M (128K x 24)
• Package / Case: 119-BGA
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Maximum Clock Frequency: 1 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 175 mA
• Organization: 128 K x 24
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 3Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: BGA
• Operating Temp Range: -40C to 85C
• Supply Current: 175mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 119
• Word Size: 24b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Electrical Characteristics
Over the Operating Range
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Notes
Document Number: 001-08353 Rev. *C
V
V
V
V
I
I
I
I
I
C
C
2. V
3. CE refers to a combination of CE
IX
OZ
CC
SB1
SB2
Parameter
Parameter
Parameter
OH
OL
IH
IL
IN
OUT
[2]
IL
Θ
Θ
(min) = –2.0V and V
JA
JC
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Current
Automatic CE Power Down
Current —TTL Inputs
Automatic CE Power Down
Current — CMOS Inputs
Input Capacitance
I/O Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[2]
CC
................................... –0.5V to V
Operating Supply
CC
IH
Description
(max) = V
Relative to GND
Description
Description
1
, CE
CC
2
+ 2V for pulse durations of less than 20 ns.
, and CE
3
[2]
. CE is LOW when CE
....–0.5V to +4.6V
V
V
GND < V
GND < V
V
I
Max V
V
Max V
V
OUT
CC
CC
CC
IN
IN
> V
> V
T
Still air, soldered on a 3 × 4.5 inch,
four layer printed circuit board
= Min, I
= Min, I
= Max, f = f
= 0 mA CMOS levels
A
CC
CC
CC
IH
CC
= 25°C, f = 1 MHz, V
I
OUT
, CE > V
, CE > V
or V
+ 0.5V
< V
– 0.3V, or V
OH
OL
< V
CC
1
IN
, CE
= 8.0 mA
= –4.0 mA
MAX
< V
Test Conditions
CC
IH
CC
3
are LOW and CE
, output disabled
IL
= 1/t
– 0.3V,
, f = f
Test Conditions
Test Conditions
IN
DC Input Voltage
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............. ...............................>2001V
(MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
< 0.3V, f = 0
RC
MAX
CC
Industrial
Range
= 3.3V
2
is HIGH. CE is HIGH when CE
[3]
[2]
............................... –0.5V to V
–40°C to +85°C
Temperature
Ambient
1
is HIGH, or CE
–0.3
Min
2.4
2.0
–1
–1
119-Ball
CY7C1024DV33
PBGA
20.31
Max
8.35
10
–10
8
V
CC
2
Max
175
0.4
0.8
+1
+1
30
25
is LOW, or CE
+ 0.3
3.3V ± 0.3V
CC
V
Page 3 of 9
CC
°C/W
°C/W
Unit
Unit
+ 0.5V
pF
pF
Unit
3
mA
mA
mA
μA
μA
V
V
V
V
is HIGH.
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