VS-VSKDU162/12PBF Vishay Semiconductors, VS-VSKDU162/12PBF Datasheet

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VS-VSKDU162/12PBF

Manufacturer Part Number
VS-VSKDU162/12PBF
Description
Discrete Semiconductor Modules 1200 Volt 100 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-VSKDU162/12PBF

Product Category
Discrete Semiconductor Modules
Rohs
yes
Mounting Style
Screw
Package / Case
INT-A-PAK
Forward Voltage Drop
3.9 V at 160 A
Factory Pack Quantity
15
Document Number: 94512
Revision: 04-May-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum power dissipation
RMS isolation voltage
Operating junction and storage
temperature range
ELECTRICAL SPECIFICATIONS PER LEG (T
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse leakage current
V
I
t
F(DC)
rr
F
(typical)
(typical)
V
R
at T
C
New INT-A-PAK
HEXFRED
(New INT-A-PAK Power Modules)
SYMBOL
SYMBOL
T
For technical questions, contact:
110 A at 100 °C
V
J
I
V
V
I
FSM
, T
V
P
ISOL
RM
I
FM
BR
F
R
D
Stg
1200 V
150 ns
2.5 V
I
I
I
T
T
T
Limited by junction temperature
T
T
50 Hz, circuit to base, all terminal shorted, t = 1 s
®
R
F
F
C
C
C
C
J
= 100 A
= 160 A
= 100 μA
= 150 °C, V
= 25 °C
= 100 °C
= 25 °C
= 100 °C
Ultrafast Diodes, 100 A
J
= 25 °C unless otherwise specified)
TEST CONDITIONS
R
TEST CONDITIONS
= 1200 V
FEATURES
• Electrically isolated: DBC base plate
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style New INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
indmodules@vishay.com
Vishay High Power Products
VSKDU162/12PbF
MIN.
1200
-
-
-
- 40 to + 150
VALUES
1200
3500
800
205
110
695
280
TYP.
2.5
2.9
18
-
MAX.
3.2
3.9
www.vishay.com
30
-
UNITS
°C
W
V
A
V
UNITS
mA
V
1

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VS-VSKDU162/12PBF Summary of contents

Page 1

... 100 μ 100 160 150 ° 1200 For technical questions, contact: indmodules@vishay.com VSKDU162/12PbF Vishay High Power Products VALUES UNITS 1200 V 205 110 A 800 695 W 280 3500 150 °C MIN. TYP. MAX. 1200 - ...

Page 2

... VSKDU162/12PbF Vishay High Power Products DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Peak rate of recovery current THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction operating and storage temperature range Maximum internal thermal resistance, junction to case per leg Typical thermal resistance, ...

Page 3

... Vishay High Power Products 100 T = 150˚ 0.1 25˚C 0.01 0.001 200 400 600 800 1000 Reverse Voltage - V (V) R Fig Typical Values of Reverse Current vs. Reverse Voltage 160 140 120 DC 100 80 60 Square wave (D = 0.50 120 160 Average Forward Current - I F(AV) Fig ...

Page 4

... HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules) 200 250 (A) F(AV) Fig Typical Reverse Recovery Charge vs /dt Fig Typical Reverse Recovery Current vs For technical questions, contact: indmodules@vishay.com 10000 Vr = 200V If = 160A 25˚C 1000 100 (A/µs) ...

Page 5

... Ultrafast Diodes, 100 162 / Vishay HPP - K = New INT-A-PAK module ® HEXFRED ultrafast diode - Current rating - Voltage rating (12 = 1200 V) - PbF = Lead (Pb)-free ( (2) - (3) LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com VSKDU162/12PbF Vishay High Power Products 12 PbF 5 6 www.vishay.com/doc?95254 www.vishay.com 5 ...

Page 6

... Document Number: 95254 Revision: 11-Dec-07 INT-A-PAK DBC 80 (3.15) 23 (0.91) 23 (0.91 (2.60) 94 (3.70) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 37 (1.44) www.vishay.com 1 ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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