CY7C09389V-12AXC Cypress Semiconductor Corp, CY7C09389V-12AXC Datasheet - Page 10
CY7C09389V-12AXC
Manufacturer Part Number
CY7C09389V-12AXC
Description
IC SRAM 1.152MBIT 12NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C09389V-9AXI.pdf
(19 pages)
Specifications of CY7C09389V-12AXC
Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
1.152M (64K x 18)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C09389V-12AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
135
Company:
Part Number:
CY7C09389V-12AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Company:
Part Number:
CY7C09389V-12AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document #: 38-06056 Rev. *C
27. Output state (High, LOW, or high impedance) is determined by the previous cycle control signals.
28. CE
29. During “No Operation”, data in memory at the selected address may be corrupted and must be rewritten to ensure data integrity.
ADDRESS
ADDRESS
DATA
DATA
0
DATA
DATA
and ADS = V
CLK
R/W
CE
CE
CLK
R/W
OUT
CE
CE
OUT
OE
IN
IN
0
1
0
1
t
t
t
t
t
t
SW
SW
SC
SA
SC
SA
IL
; CE
1
, CNTEN, and CNTRST = V
A
A
n
n
t
t
Figure 10. Pipelined Read-to-Write-to-Read (OE Controlled)
CH2
CH2
t
t
Figure 9. Pipelined Read-to-Write-to-Read (OE = V
CYC2
t
CYC2
t
(continued)
t
t
t
t
HW
HW
HC
HA
HC
HA
t
t
CL2
CL2
A
A
READ
READ
n+1
n+1
t
t
CD2
IH
CD2
.
t
Q
SW
t
OHZ
n
Q
n
t
SW
t
SD
D
A
A
n+2
n+2
n+2
t
t
HW
CKHZ
t
NO OPERATION
HD
t
HW
t
WRITE
SD
A
D
A
D
n+3
n+2
n+2
n+3
t
HD
WRITE
IL
)
[20, 27, 28, 29]
[20, 27, 28, 29]
CY7C09269V/79V/89V
CY7C09369V/79V/89V
A
A
n+3
n+4
t
CKLZ
t
CKLZ
READ
READ
A
A
n+4
n+5
t
t
CD2
CD2
Page 10 of 19
Q
n+4
Q
n+3
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