VS-HFA04SD60STRHM3 Vishay Semiconductors, VS-HFA04SD60STRHM3 Datasheet

VS-HFA04SD60STRHM3

Manufacturer Part Number

VS-HFA04SD60STRHM3

Description

Rectifiers 4 Amp 600 Volt

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-HFA04SD60STRHM3.pdf (7 pages)

Specifications of VS-HFA04SD60STRHM3

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

1.8 V

Recovery Time

57 ns

Forward Continuous Current

4 A

Max Surge Current

25 A

Reverse Current Ir

3 uA

Mounting Style

SMD/SMT

Package / Case

D-PAK

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Tradename

HEXFRED

Current page: 1 of 7
Download datasheet (110Kb)

Revision: 10-Aug-12

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Repetitive peak forward current

Maximum power dissipation

Operating junction and storage temperatures

ELECTRICAL SPECIFICATIONS (T

PARAMETER

Breakdown voltage,

blocking voltage

Forward voltage

See fig. 1

Maximum reverse

leakage current

Junction capacitance

Series inductance

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

D-PAK (TO-252AA)

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

Diode variation

Package

F(AV)

max.

typ.

at I

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

SYMBOL

Ultrafast Soft Recovery Diode, 4 A

TO-252AA (D-PAK)

N/C

Measured lead to lead 5 mm from package body

Single die

150 °C

= 4 A

= 8 A

= 4 A, T

= 100 μA

600 V

17 ns

1.8 V

= 125 °C, V

= V

= 200 V

4 A

2, 4

= 25 °C unless otherwise specified)

Anode

rated

SYMBOL

= 125 °C

TEST CONDITIONS

HEXFRED

F(AV)

FSM

FRM

, T

RRM

= 0.8 x V

Stg

rated

TEST CONDITIONS

= 100 °C

= 116 °C

= 100 °C

FEATURES

• Ultrafast recovery time

• Ultrasoft recovery

• Very low I

• Very low Q

• Guaranteed avalanche

• Specified at operating temperature

• AEC-Q101 qualified

• Meets JESD 201 class 1A whisker test

• Meets MSL level 1, per J-STD-020, LF maximum peak of

• Material categorization: For definitions of compliance

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI

in high frequency power conditioning systems. The softness

of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

freewheeling, flyback, power converters, motor drives, and

other applications where high speed and reduced switching

losses are design requirements.

260 °C

please see

www.vishay.com/doc?91000

RRM

www.vishay.com/doc?99912

VS-HFA04SD60SHM3

MIN.

600

Vishay Semiconductors

- 55 to 150

VALUES

DiodesEurope@vishay.com

600

TYP.

0.17

1.5

1.8

1.4

8.0

Document Number: 94756

MAX.

300

1.8

2.2

1.7

3.0

UNITS

°C

UNITS

μA

Related parts for VS-HFA04SD60STRHM3

VS-HFA04SD60STRHM3 Summary of contents

Page 1

... 125 ° rated 125 ° 0 rated 200 V R Measured lead to lead 5 mm from package body 1 www.vishay.com/doc?91000 VS-HFA04SD60SHM3 Vishay Semiconductors rr www.vishay.com/doc?99912 VALUES UNITS 600 150 °C MIN. TYP. MAX. UNITS 600 - ...

Page 2

... 125 ° /dt = 200 A/μ ° 200 125 ° ° 125 °C J TEST CONDITIONS Typical socket mount Case style D-PAK 2 www.vishay.com/doc?91000 VS-HFA04SD60SHM3 Vishay Semiconductors MIN. TYP. MAX. UNITS - 2.9 5 3.7 6 105 ...

Page 3

... J 0 Forward Voltage Drop (V) F Fig Typical Forward Voltage Drop Characteristics Fig Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 Fig Maximum Thermal Impedance Z Revision: 10-Aug-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ...

Page 4

... 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µs) F Fig ...

Page 5

... F ( area under curve defined and I RRM Q (5) dI /dt - peak rate of change of (rec)M current during t and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions 5 www.vishay.com/doc?91000 VS-HFA04SD60SHM3 Vishay Semiconductors ( RRM (5) / RRM = rr 2 portion Document Number: 94756 DiodesEurope@vishay ...

Page 6

... ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R VS-HFA04SD60SHM3 VS-HFA04SD60STRHM3 VS-HFA04SD60STRRHM3 VS-HFA04SD60STRLHM3 Dimensions Part marking information Packaging information Revision: 10-Aug-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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