VS-HFA200FA120P Vishay Semiconductors, VS-HFA200FA120P Datasheet

VS-HFA200FA120P

Manufacturer Part Number

VS-HFA200FA120P

Description

Rectifiers 1200 Volt 200 Amp Dual 900A IFSM

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-HFA200FA120P.pdf (8 pages)

Specifications of VS-HFA200FA120P

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Dual Parallel

Reverse Voltage

1200 V

Forward Voltage Drop

4.7 V at 200 A

Recovery Time

150 ns

Forward Continuous Current

100 A

Max Surge Current

900 A

Reverse Current Ir

75 uA

Mounting Style

SMD/SMT

Package / Case

SOT-227

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Factory Pack Quantity

180

Current page: 1 of 8
Download datasheet (125Kb)

Document Number: 94607

Revision: 22-Jul-10

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

RMS isolation voltage

Operating junction and storage

temperature range

ELECTRICAL SPECIFICATIONS (T

PARAMETER

Cathode to anode

breakdown voltage

Forward voltage

Reverse leakage current

F(DC)

(typical)

at T

SOT-227

DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

For technical questions within your region, please contact one of the following:

Ultrafast Soft Recovery Diode, 200 A

SYMBOL

100 A at 69 °C

1200 V

150 ns

2.7 V

SYMBOL

= 25 °C unless otherwise specified)

= 100 A

= 200 A

= 100 A, T

= 100 μA

= 125 °C, V

= V

FSM

FRM

, T

ISOL

Stg

TEST CONDITIONS

rated

HEXFRED

= 150 °C

Rated V

Any terminal to case, t = 1 minute

= V

= 25 °C

= 69 °C

= 25 °C

= 100 °C

rated

square wave, 20 kHz, T

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

The dual diode series configuration (HFA200FA120P) is

used for output rectification or freewheeling/clamping

operation and high voltage application.

The semiconductor in the SOT-227 package is isolated from

the copper base plate, allowing for common heatsinks and

compact assemblies to be built.

These modules are intended for general applications such

as HV power supplies, electronic welders, motor control and

inverters.

TEST CONDITIONS

DiodesEurope@vishay.com

MIN.

1200

= 60 °C

Vishay Semiconductors

TYP.

2.68

3.37

2.7

HFA200FA120P

- 55 to + 150

MAX.

1200

2500

100

900

150

416

166

MAX.

3.6

4.7

2.9

www.vishay.com

UNITS

μA

°C

Related parts for VS-HFA200FA120P

VS-HFA200FA120P Summary of contents

Page 1

... TEST CONDITIONS I = 100 μ 100 200 100 150 ° rated 125 ° rated HFA200FA120P Vishay Semiconductors MAX. 1200 100 900 = 60 °C 150 C 416 166 2500 - 150 MIN. TYP. MAX. 1200 - - - 2.68 3.6 - 3.37 4.7 - 2.7 2.9 - ...

Page 2

... HFA200FA120P Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque www.vishay.com For technical questions within your region, please contact one of the following: 2 DiodesAmericas@vishay ...

Page 3

... HFA200FA120P Vishay Semiconductors 10 150°C 1 125°C 0.1 0.01 25°C 200 400 600 800 1000 1200 Reverse Voltage - V (V) R Fig Typical Values of Reverse Current vs. Reverse Voltage 1E-01 1E+00 Characteristics 450 180° 400 120° 90° 350 DC 60° 30° 300 250 RMS Limit 200 ...

Page 4

... Vishay Semiconductors 300 Vr = 200V 250 If = 50A 125°C 200 If = 50A 25°C 150 100 /dt (A/μs) F Fig Typical Reverse Recovery Time vs. dI Note (1) Formula used ( REV Pd = Forward power loss = F(AV Inverse power loss = ...

Page 5

... Q - area under curve defined and I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions HFA200FA120P Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM ...

Page 6

... HFA200FA120P Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED Ultrafast Soft Recovery Diode, 200 200 FA 120 ® HEXFRED ...

Page 7

... Revision: 28-Aug-07 SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer nuts 2.00 (0.079) x 45° -A- 3 25.70 (1.012) 6.25 (0.246) 25.20 (0.992) - full 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 0.25 (0.010) M 8.10 (0.319 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) -C- 0.12 (0.005) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 12.30 (0.484) 11.80 (0.464) www.vishay.com 1 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

Related keywords

VS-HFA200FA120P datasheet
VS-HFA200FA120P data sheet
VS-HFA200FA120P pdf datasheet
VS-HFA200FA120P component
VS-HFA200FA120P part
VS-HFA200FA120P distributor
VS-HFA200FA120P RoHS
VS-HFA200FA120P datasheet download