VS-ETH3006STRLHM3 Vishay Semiconductors, VS-ETH3006STRLHM3 Datasheet

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VS-ETH3006STRLHM3

Manufacturer Part Number
VS-ETH3006STRLHM3
Description
Rectifiers 30 Amp 600 Volt
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-ETH3006STRLHM3

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.65 V
Recovery Time
35 ns
Forward Continuous Current
30 A
Max Surge Current
180 A
Reverse Current Ir
30 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Tradename
FRED Pt
Revision: 22-May-12
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage
temperatures
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
VS-ETH3006SHM3
N/C
Diode variation
Package
1
T
t
V
cathode
D
rr
J
I
F
Base
2
F(AV)
V
(typ.)
max.
PAK
at I
R
www.vishay.com
2
F
Anode
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
Hyperfast Rectifier, 30 A FRED Pt
V
TO-263AB (D
V
C
V
L
I
BR
R
R
F
S
T
,
VS-ETH3006-1HM3
N/C
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
Single die
R
F
F
1
J
R
R
175 °C
= 30 A
= 30 A, T
2.65 V
= 100 μA
TO-262
600 V
27 ns
= 150 °C, V
2
30 A
= V
= 600 V
PAK), TO-262AA
SYMBOL
J
T
2
V
R
I
J
= 25 °C unless otherwise specified)
I
F(AV)
FSM
, T
Anode
RRM
rated
Stg
J
3
= 150 °C
TEST CONDITIONS
R
VS-ETH3006SHM3, VS-ETH3006-1HM3
New Product
= V
T
T
R
C
C
rated
= 95 °C
= 25 °C
1
TEST CONDITIONS
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• AEC-Q101 qualified, meets JESD 201 class 1A
• Meets
• Material categorization:
DESCRIPTION/APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
whisker test
LF maximum peak of 260 °C
For definitions of compliance please see
www.vishay.com/doc?99912
MSL
www.vishay.com/doc?91000
level
MIN.
600
-
-
-
-
-
-
Vishay Semiconductors
1,
®
DiodesEurope@vishay.com
per
TYP.
- 65 to 175
0.02
2.0
1.4
8.0
50
20
-
MAX.
600
180
30
Document Number: 94425
J-STD-020,
MAX.
2.65
300
1.8
30
-
-
-
UNITS
°C
V
A
UNITS
nH
μA
pF
V

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VS-ETH3006STRLHM3 Summary of contents

Page 1

... For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product VS-ETH3006SHM3, VS-ETH3006-1HM3 FEATURES • Hyperfast recovery time • Low forward voltage drop • ...

Page 2

... Revision: 22-May-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product VS-ETH3006SHM3, VS-ETH3006-1HM3 = 25 °C unless otherwise specified) J TEST CONDITIONS / A/μ ...

Page 3

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product VS-ETH3006SHM3, VS-ETH3006-1HM3 1000 100 10 1 0.1 0.01 0.001 0.0001 Fig Typical Values of Reverse Current vs. 1000 = 150 °C 100 10 1 2.5 3.0 3.5 (V) FM Fig Typical Junction Capacitance vs. ...

Page 4

... F Fig Typical Reverse Recovery Time vs. dI Revision: 22-May-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product ...

Page 5

... Revision: 22-May-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product VS-ETH3006SHM3, VS-ETH3006-1HM3 V = 200 V R 0.01 Ω μH D ...

Page 6

... ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE VS-ETH3006SHM3 VS-ETH3006-1HM3 VS-ETH3006STRRHM3 VS-ETH3006STRLHM3 Dimensions Part marking information Packaging information Revision: 22-May-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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