NGTB15N120LWG ON Semiconductor, NGTB15N120LWG Datasheet - Page 4

• Manufacturer Part Number: NGTB15N120LWG
• Description: IGBT Transistors 1200V/15A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB15N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 156 W
• Package / Case: TO-247
• Mounting Style: Through Hole

1000
1000
100
100
16
14
12
10
10
10
8
6
4
2
0
1
1
0
0
8
V
V
I
Rg = 15 W
C
V
V
T
Rg = 15 W
10
Figure 9. Switching Time vs. Temperature
CE
GE
J
CE
GE
= 15 A
25
20
= 150°C
= 600 V
= 15 V
t
= 600 V
= 15 V
d(on)
12
Figure 11. Switching Time vs. I
t
Figure 7. Typical Gate Charge
d(on)
14
50
40
Q
G
TEMPERATURE (°C)
16
I
t
, GATE CHARGE (nC)
C
d(off)
, COLLECTOR (A)
75
60
t
f
18
400 V
100
80
20
22
100
125
200 V
t
24
d(off)
t
t
f
r
TYPICAL CHARACTERISTICS
120
150
t
26
r
600 V
C
28
175
140
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30
200
160
32
4
3.5
2.5
1.5
0.5
3
2
1
0
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
8
5
V
V
T
Rg = 15 W
V
V
I
T
C
V
V
I
Rg = 15 W
J
CE
GE
J
C
CE
GE
10
CE
GE
= 15 A
= 150°C
= 150°C
= 15 A
Figure 8. Energy Loss vs. Temperature
20
15
= 600 V
= 15 V
= 600 V
= 15 V
= 600 V
= 15 V
12
Figure 12. Energy Loss vs. Rg
Figure 10. Energy Loss vs. I
25
40
14
Rg, GATE RESISTOR (W)
TEMPERATURE (°C)
16
I
C
, COLLECTOR (A)
35
60
18
20
45
80
22
100
E
E
55
E
on
off
E
off
24
on
120
26
65
C
28
140
75
30 32
160
85