NGTB15N120LWG ON Semiconductor, NGTB15N120LWG Datasheet - Page 5

• Manufacturer Part Number: NGTB15N120LWG
• Description: IGBT Transistors 1200V/15A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB15N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 156 W
• Package / Case: TO-247
• Mounting Style: Through Hole

1000
1000
100
100
10
10
1
1
5
375
V
V
I
T
V
I
Rg = 15 W
T
C
C
CE
GE
J
GE
J
= 15 A
= 15 A
= 150°C
= 150°C
425
15
V
= 600 V
= 15 V
= 15 V
t
CE
Figure 15. Switching Time vs. V
d(on)
Figure 13. Switching Time vs. Rg
t
d(on)
, COLLECTOR−EMITTER VOLTAGE (V)
475
25
Rg, GATE RESISTOR (W)
t
d(off)
t
r
t
525
d(off)
35
1000
0.01
100
575
0.1
45
10
1
1
Figure 17. Reverse Bias Safe Operating Area
625
55
V
CE
TYPICAL CHARACTERISTICS
t
f
675
65
, COLLECTOR−EMITTER VOLTAGE (V)
CE
t
t
10
r
f
725
75
V
http://onsemi.com
GE
= 15 V, T
775
85
5
100
C
1000
0.01
= 125°C
100
4.5
3.5
2.5
1.5
0.5
0.1
10
1
5
4
3
2
1
0
1
375
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
V
I
Rg = 15 W
T
C
J
GE
425
= 15 A
= 150°C
V
V
dc operation
CE
CE
= 15 V
1000
C
Figure 14. Energy Loss vs. V
Figure 16. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
1 ms
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
475
100 ms
10
525
50 ms
575
625
100
675
CE
725
775
100