TIG064E8-TL-H ON Semiconductor, TIG064E8-TL-H Datasheet

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TIG064E8-TL-H

Manufacturer Part Number
TIG064E8-TL-H
Description
IGBT Transistors NCH IGBT 150A 400V 2.5V
Manufacturer
ON Semiconductor
Datasheet

Specifications of TIG064E8-TL-H

Rohs
yes
Ordering number : ENA1602A
TIG064E8
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Package Dimensions
unit : mm (typ)
7011A-004
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm
Halogen free compliance
1
8
Parameter
0.65
Bot t om View
Top View
2.9
5
4
0.3
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
0.15
V CES
V GES
V GES
I CP
dV CE / dt
Tch
Tstg
Symbol
TIG064E8-TL-H
0 t o 0.02
N-Channel IGBT
Light-Controlling Flash Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤1ms
V GE =2.5V, C M =100μF
V CE ≤320V, starting Tch=25°C
2
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3000 pcs./reel
Packing Type: TL
Electrical Connection
Low voltage drive (2.5V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Conditions
8
1
TL
7
2
62012 TKIM/N1809PJ TKIM TC-00002186
6
3
DATA SHEET
5
4
: ECH8
: -
Marking
Ratings
LOT No.
ZD
-40 to +150
400
150
400
150
±4
±5
No. A1602-1/7
V / μs
Unit
°C
°C
A
V
V
V

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TIG064E8-TL-H Summary of contents

Page 1

... =2.5V =100μ ≤320V, starting Tch=25°C Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3000 pcs./reel TIG064E8-TL-H Packing Type 0.02 TL Electrical Connection http://semicon.sanyo.com/en/network ...

Page 2

... R G < 160 Ω can also be used. Note2. The collector voltage gradient must be smaller than 400V / μs to protect the device when it is turned off. Ordering Information Device TIG064E8-TL 150 125 ...

Page 3

... Case Temperature ° Time -- Switching test circuit Fig 1000 100 100 Collector Current (Pulse TIG064E8 10 Tc= --25 ° 4.0 4.5 5.0 1.0 1.5 IT15156 10 Tc= 75 ° =2. 4.0 4.5 5.0 --50 ...

Page 4

... Gate Series Resistance Ω 300 250 Tc=70 ° C 200 150 100 100 Collector Current (Pulse TIG064E8 180 V CE =320V V GE =2. =100μF 160 V CC =320V I CP =150A 140 C M =100μF 120 PW=50μs 100 ...

Page 5

... Embossed Taping Specifi cation TIG064E8-TL-H TIG064E8 No. A1602-5/7 ...

Page 6

... Outline Drawing TIG064E8-TL-H TIG064E8 Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No. A1602-6/7 ...

Page 7

... Note : TIG064E8 has protection diode between gate and emitter but handling it requires suffi cient care to be taken. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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