TIG064E8-TL-H ON Semiconductor, TIG064E8-TL-H Datasheet - Page 2

• Manufacturer Part Number: TIG064E8-TL-H
• Description: IGBT Transistors NCH IGBT 150A 400V 2.5V
• Manufacturer: ON Semiconductor

Specifications of TIG064E8-TL-H

• Rohs: yes

Electrical Characteristics at Ta=25°C
Fig.1 Large Current R Load Switching Circuit
V GE
Note1. Gate Series Resistance R G ≥ 160 Ω is recommended for protection purpose at the time of turn OFF. However,
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
Ordering Information
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TIG064E8-TL-H
150
125
100
75
50
25
0
0
if dv / dt ≤ 400V / μs is satisfi ed at customer’s actual set evaluation, R G < 160 Ω can also be used.
R G
1
Device
Parameter
Collector-to-Emitter Voltage, V CE -- V
2
100kΩ
3
R L
I C -- V CE
4
TIG064E8
5
6
C M
I CES
V (BR)CES
I GES
Cies
Coes
Cres
V GE (off)
V CE (sat)
Symbol
7
Package
ECH8
+
8
Tc=25 ° C
I C =2mA, V GE =0V
V CE =320V, V GE =0V
V GE =±4V, V CE =0V
IT15154
V CE =10V, f=1MHz
9
V CE =10V, I C =1mA
I C =100A, V GE =2.5V
V CC
10
TIG064E8
Conditions
3,000pcs./reel
Shipping
150
125
100
75
50
25
0
0
V CE =10V
0.5
Gate-to-Emitter Voltage, V GE -- V
1.0
min
1.5
I C -- V GE
400
Pb Free and Halogen Free
0.4
2.0
Ratings
typ
memo
3100
4.2
2.5
30
23
3.0
max
±10
0.9
10
No. A1602-2/7
7
3.5
IT15155
Unit
μA
μA
pF
pF
pF
V
V
V
4.0