PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet

PSMN7R0-100XS,127

Manufacturer Part Number

PSMN7R0-100XS,127

Description

MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN7R0-100XS127.pdf (15 pages)

Specifications of PSMN7R0-100XS,127

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

38.9 A

Resistance Drain-source Rds (on)

5.4 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220F

Minimum Operating Temperature

- 55 C

Power Dissipation

57.7 W

Factory Pack Quantity

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1. Product profile

Table 1.

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive drain-source

avalanche energy

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.

This product is designed and qualified for use in a wide range of industrial,

communications and domestic equipment.



PSMN7R0-100XS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220F

(SOT186A)

Rev. 3 — 6 March 2012

High efficiency due to low switching

and conduction losses

AC-to-DC power supply equipment

Motor control

Conditions

see

sup

≥ 25 °C; T

Figure

Figure 3

= 25 °C; V

= 25 °C; see

= 10 V; I

= 10 V; T

≤ 100 V; unclamped; R

12; see

14; see

≤ 175 °C

j(init)

= 15 A; T

= 15 A; V

Figure 2

= 10 V; see

= 25 °C; I

Figure 13

Figure 15

= 25 °C;

= 50 V;

= 55 A;

Figure 1



= 50 Ω;

Isolated package

Suitable for standard level gate drive

Server power supplies

Synchronous rectification

Min

Product data sheet

Typ

5.4

121

Max

100

57.7

6.8

420

Unit

mΩ

Related parts for PSMN7R0-100XS,127

PSMN7R0-100XS,127 Summary of contents

Page 1

... PSMN7R0-100XS N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 3 — 6 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... T pulsed ° ° j(init Ω; see unclamped; R Figure 3 GS All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS Graphic symbol mbb076 Min - - -20 - Figure 1 - Figure -55 - ≤ ...

Page 3

... Fig ( All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS 100 150 Normalized total power dissipation as a function of mounting base temperature 003aag574 (1) ( (ms) AL 03aa16 ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN7R0-100XS Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS 003aag575 =10 μ 100 μ 100 ...

Page 5

... N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Conditions see vertical in free air - Conditions 50 Hz ≤ f ≤ 60 Hz; RH ≤ sinusoidal waveform; clean and dust free All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS Min Typ Figure ...

Page 6

... °C; see Figure 16; j see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS Min Typ = 25 °C 100 - j = -55 ° ° 100 °C ...

Page 7

... V (V) DS Fig 7. 003aag579 120 I D (A) 100 80 120 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS Min Typ = 25 ° 167 Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... T (°C) j Fig 11. Sub-threshold drain current as a function of 003aag583 5.0 5.5 6.0 10 120 160 200 I (A) D Fig 13. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS − (A) min typ −2 10 −3 10 −4 10 −5 10 − ...

Page 9

... C C (pF) iss 10000 C oss C rss (V) DS Fig 17. Input and reverse transfer capacitances as a All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS (V) 80V 8 50V V = 20V charge; typical values ...

Page 10

... N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 200 I S (A) 160 120 80 = 175 ° ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS 003aag588 1.2 1.6 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 11

... scale 0.7 15.8 6.5 10.3 2.7 2.54 5.08 0.4 15.2 6.3 9.7 1.7 REFERENCES JEDEC JEITA 3-lead TO-220F All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS mounting base ( max. 0.6 14.4 3.30 3.2 2.6 3 0.4 13.5 2.79 3.0 2.3 EUROPEAN PROJECTION SOT186A ...

Page 12

... N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Data sheet status Product data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS Change notice Supersedes - PSMN7R0-100XS v.2 - PSMN7R0-100XS v.1 © NXP B.V. 2012. All rights reserved ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 PSMN7R0-100XS © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN7R0-100XS All rights reserved. Date of release: 6 March 2012 Document identifier: PSMN7R0-100XS ...

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