PSMN7R0-100PS NXP Semiconductors, PSMN7R0-100PS Datasheet
PSMN7R0-100PS
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PSMN7R0-100PS Summary of contents
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... PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Rev. 02 — 7 January 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PSMN7R0-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Quick reference …continued Conditions ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Max - 100 - 100 - [1] - 100 Figure 3 - 475 - 269 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003aad559 = 10 μ 100 μ 100 ms ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Typ Max Unit - 0.3 0.56 K K/W 003a a d560 t p δ ...
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... see Figure 14 and see Figure 14 and MHz see Figure 15 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Typ Max 100 - - 4 150 - 0.08 ...
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... V ( 2000 (V) DS Fig 6. Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Typ Max Unit - 34 45 103 49.5 - ...
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... GS(th) ( − (V) GS Fig 10. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003a a d568 = 175 ° ° (V) GS 003aad280 max typ min ...
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... Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003a a d563 100 I (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003aad774 0 60 120 T (° GS(pl) V GS(th) V ...
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... V (V) DS Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003a a d570 = 175 ° °C 0 0.3 0.6 0 © NXP B.V. 2010. All rights reserved. ...
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... Fig 17. Gate-source voltage as a function of gate charge; typical values PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 003a a d569 V = 50V 105 Q (nC) G All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 140 © NXP B.V. 2010. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 08-04-23 08-06-13 © NXP B.V. 2010. All rights reserved. ...
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... Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Supersedes PSMN7R0-100PS_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 January 2010 Document identifier: PSMN7R0-100PS_2 ...