PSMN7R0-100PS NXP Semiconductors, PSMN7R0-100PS Datasheet - Page 9

• Manufacturer Part Number: PSMN7R0-100PS
• Description: Standard level N-channel MOSFET in TO220 package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R0-100PS_2
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
(A)
R
I
(mΩ)
10
10
10
10
10
10
D
DS on
−1
−2
−3
−4
−5
−6
20
15
10
5
0
gate-source voltage
of drain current; typical values
0
0
20
2
40
V
min
GS
(V) = 4.5
60
typ
4
max
V
10
80
All information provided in this document is subject to legal disclaimers.
GS
003a a d563
(V)
I
D
03aa35
20
(A)
5
6
100
Rev. 02 — 7 January 2010
6
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
3.2
2.4
1.6
0.8
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
PSMN7R0-100PS
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aad774
003aaa508
T
j
(°C)
180
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