PSMN7R0-100PS NXP Semiconductors, PSMN7R0-100PS Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-100PS
• Description: Standard level N-channel MOSFET in TO220 package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN7R0-100PS_2
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(A)
I
D
300
240
180
120
60
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
1
20
…continued
2
6
Conditions
V
R
I
see
I
V
S
S
DS
G(ext)
DS
= 25 A; V
= 25 A; dI
3
V
5.5
All information provided in this document is subject to legal disclaimers.
Figure 16
= 50 V; R
= 50 V
GS
003a a d562
V
(V) = 4
= 4.7 Ω; T
DS
4.5
(V)
5
GS
Rev. 02 — 7 January 2010
S
4
/dt = 100 A/µs; V
L
= 0 V; T
= 2 Ω; V
j
= 25 °C
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
j
GS
= 25 °C;
Fig 6.
= 10 V;
12000
10000
GS
(pF)
8000
6000
4000
2000
C
= 0 V;
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
5
PSMN7R0-100PS
Min
-
-
-
-
-
-
-
10
Typ
34.6
45.6
103.9
49.5
0.8
64
167
15
© NXP B.V. 2010. All rights reserved.
003a a d566
V
Max
-
-
-
-
1.2
-
-
GS
C
C
is s
rs s
(V)
20
Unit
ns
ns
ns
ns
V
ns
nC
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