NTDV3055L104T4G ON Semiconductor, NTDV3055L104T4G Datasheet - Page 2

• Manufacturer Part Number: NTDV3055L104T4G
• Description: MOSFET NFET 60V 12A 0.104R
• Manufacturer: ON Semiconductor

Specifications of NTDV3055L104T4G

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 104 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 80 ns
• Gate Charge Qg: 20 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48 W
• Rise Time: 210 ns
• Typical Turn-off Delay Time: 40 ns

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
Static Drain−to−Source On−Voltage (Note 3)
Forward Transconductance (Note 3) (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
= 0 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= V
= 5.0 Vdc, I
= 5.0 Vdc, I
= 5.0 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
D
= 250 mAdc)
GS
GS
= 6.0 Adc)
= 12 Adc)
= 6.0 Adc, T
= 0 Vdc)
= 0 Vdc, T
Characteristic
GS
J
J
= 150°C)
= ± 15 Vdc, V
= 150°C)
(I
DS
(T
V
S
(I
GS
S
= 12 Adc, V
J
= 8.0 Vdc, I
= 25°C unless otherwise noted)
= 12 Adc, V
(V
(V
(V
= 5.0 Vdc, R
(I
dI
DS
V
S
DD
DS
S
GS
DS
/dt = 100 A/ms) (Note 3)
= 12 Adc, V
= 25 Vdc, V
= 30 Vdc, I
= 48 Vdc, I
= 0 Vdc)
= 5.0 Vdc) (Note 3)
f = 1.0 MHz)
D
GS
= 6.0 Adc)
GS
http://onsemi.com
= 0 Vdc, T
G
= 0 Vdc) (Note 3)
= 9.1 W) (Note 3)
GS
D
D
GS
= 12 Adc,
= 12 Adc,
= 0 Vdc,
= 0 Vdc,
2
J
= 150°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
C
I
DS(on)
DS(on)
C
Q
GS(th)
C
V
g
d(on)
d(off)
DSS
GSS
Q
Q
Q
t
t
t
FS
oss
t
t
rss
SD
RR
iss
rr
a
b
r
f
T
1
2
Min
1.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
62.9
0.98
0.86
40.5
0.95
0.82
0.04
Typ
316
105
104
1.6
4.2
9.1
9.2
7.4
2.0
4.0
70
89
35
19
35
21
14
−
−
−
±100
Max
1.50
104
440
150
210
1.0
2.0
1.2
10
70
20
40
80
20
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mW
nC
mC
pF
ns
ns