NTDV3055L104T4G ON Semiconductor, NTDV3055L104T4G Datasheet - Page 7

• Manufacturer Part Number: NTDV3055L104T4G
• Description: MOSFET NFET 60V 12A 0.104R
• Manufacturer: ON Semiconductor

Specifications of NTDV3055L104T4G

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 104 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 80 ns
• Gate Charge Qg: 20 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48 W
• Rise Time: 210 ns
• Typical Turn-off Delay Time: 40 ns

100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
GS
C
Figure 11. Maximum Rated Forward Biased
0.00001
= 25°C
V
0.02
D = 0.5
0.2
0.1
0.05
= 15 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
1
R
THERMAL LIMIT
PACKAGE LIMIT
0.01
DS(on)
0.0001
LIMIT
100 ms
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
S
10 ms
0.001
Figure 13. Thermal Response
SAFE OPERATING AREA
t
p
10 ms
dc
http://onsemi.com
100
di/dt
t, TIME (s)
t
a
7
t
0.01
rr
t
b
I
S
70
60
50
50
40
30
20
10
P
0.25 I
0
(pk)
25
DUTY CYCLE, D = t
Figure 12. Maximum Avalanche Energy versus
S
T
t
1
J
, STARTING JUNCTION TEMPERATURE (°C)
t
2
50
Starting Junction Temperature
0.1
TIME
1
75
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
100
(t) = r(t) R
- T
C
1
= P
125
(pk)
qJC
1
R
qJC
I
D
(t)
= 11 A
150
10
175