5LP01S-TL-E ON Semiconductor, 5LP01S-TL-E Datasheet

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5LP01S-TL-E

Manufacturer Part Number
5LP01S-TL-E
Description
MOSFET NCH 1.5V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of 5LP01S-TL-E

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 50 V
Continuous Drain Current
- 0.07 A
Resistance Drain-source Rds (on)
23 Ohms
Mounting Style
SMD/SMT
Package / Case
SC-75
Power Dissipation
0.15 W
Ordering number : EN6666B
5LP01S
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7027-004
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
0.4
1
2
Parameter
1.6
0.8
3
0.1 MIN
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
5LP01S-TL-E
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
62712 TKIM/41006PE MSIM TB-00002192/D2000 TSIM TA-3075
5LP01S
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Electrical Connection
Conditions
1
TL
3
2
DATA SHEET
: SMCP
: SC-75, SOT-416
Marking
Ratings
--55 to +150
XB
--0.07
--0.28
0.15
--50
±10
150
No.6666-1/7
Unit
°C
°C
W
A
A
V
V

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5LP01S-TL-E Summary of contents

Page 1

... Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7027-004 5LP01S-TL-E 1.6 0.8 0.4 0 Gate 2 : Source 3 : Drain 0.1 MIN ...

Page 2

... =625Ω PW=10μ OUT D.C.≤1% G 5LP01S P.G 50Ω S Ordering Information Device 5LP01S-TL-E 5LP01S Symbol Conditions V (BR)DSS --1mA =0V I DSS --50V =0V I GSS V GS =±8V = (off --10V --100μA | yfs | --10V --40mA ...

Page 3

... Ta=75°C 25°C 2 --25° --0.01 --0.1 Drain Current (on --60 --40 -- Ambient Temperature °C 5LP01S --0.14 --0.12 --0.10 --0.08 --0. --1.5V --0.04 --0.02 0 --1.6 --1.8 --2.0 0 --0.5 IT00090 100 Ta=25° --8 --9 --10 --0.01 IT00092 100 --2. --0 ...

Page 4

... Drain-to-Source Voltage 0.20 0.15 0.10 0. 100 Ambient Temperature °C 5LP01S 1000 100 --1.0 --1.1 --1.2 --0.01 IT00098 -- --10V f=1MHz -- --70mA --8 --7 Ciss --6 Coss --5 --4 Crss --3 --2 --1 ...

Page 5

... Embossed Taping Specifi cation 5LP01S-TL-E 5LP01S No.6666-5/7 ...

Page 6

... Outline Drawing 5LP01S-TL-E 5LP01S Land Pattern Example Mass (g) Unit 0.003 mm * For reference Unit: mm 0.7 0.6 0.5 0.5 No.6666-6/7 ...

Page 7

... Note on usage : Since the 5LP01S is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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