5LP01S-TL-E ON Semiconductor, 5LP01S-TL-E Datasheet - Page 2

• Manufacturer Part Number: 5LP01S-TL-E
• Description: MOSFET NCH 1.5V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of 5LP01S-TL-E

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 50 V
• Continuous Drain Current: - 0.07 A
• Resistance Drain-source Rds (on): 23 Ohms
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Power Dissipation: 0.15 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
5LP01S-TL-E
P.G
--4V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD = --25V
D
S
I D = --40mA
R L =625Ω
5LP01S
V OUT
V (BR)DSS
I DSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
I GSS
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
SMCP
I D = --1mA, V GS =0V
V DS = --50V, V GS =0V
V GS =±8V, V DS =0V
V DS = --10V, I D = --100μA
V DS = --10V, I D = --40mA
I D = --40mA, V GS = --4V
I D = --20mA, V GS = --2.5V
I D = --5mA, V GS = --1.5V
V DS = --10V, f=1MHz
See specifi ed Test Circuit.
V DS = --10V, V GS = --10V, I D = --70mA
I S = --70mA, V GS =0V
5LP01S
Conditions
3,000pcs./reel
Shipping
min
--0.4
--50
70
Ratings
typ
Pb Free
--0.85
memo
1.40
0.16
0.23
160
150
100
7.4
4.2
1.3
18
20
30
20
35
max
--1.4
--1.2
±10
--1
23
28
60
No.6666-2/7
Unit
mS
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ω
Ω
Ω
V
V
V