MCH6336-P-TL-E ON Semiconductor, MCH6336-P-TL-E Datasheet - Page 2

• Manufacturer Part Number: MCH6336-P-TL-E
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of MCH6336-P-TL-E

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Continuous Drain Current: - 5 A
• Resistance Drain-source Rds (on): 43 mOhms
• Mounting Style: SMD/SMT
• Package / Case: MCPH-3
• Power Dissipation: 1.5 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
MCH6336-TL-E
MCH6336-TL-H
--4.5V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
50Ω
G
V DD = --6V
D
S
I D = --3A
R L =2Ω
MCH6336
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
V OUT
MCPH6
MCPH6
I D =--1mA, V GS =0V
V DS =--12V, V GS =0V
V GS =±8V, V DS =0V
V DS =--6V, I D =--1mA
V DS =--6V, I D =--3A
I D =--3A, V GS =--4.5V
I D =--1.5A, V GS =--2.5V
I D =--0.5A, V GS =--1.8V
V DS =--6V, f=1MHz
See specifi ed Test Circuit.
V DS =--6V, V GS =--4.5V, I D =--5A
I S =--5A, V GS =0V
MCH6336
Conditions
3,000pcs./reel
3,000pcs./reel
Shipping
min
--0.4
--12
Pb Free and Halogen Free
4.8
Ratings
typ
Pb Free
--0.83
memo
660
210
155
8.1
7.4
6.9
1.2
1.8
33
47
68
57
72
69
max
--1.4
--1.2
--10
±10
43
66
98
No. A0958-2/7
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V