SCH1333-TL-H ON Semiconductor, SCH1333-TL-H Datasheet

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SCH1333-TL-H

Manufacturer Part Number
SCH1333-TL-H
Description
MOSFET PCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of SCH1333-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 2 A
Resistance Drain-source Rds (on)
130 mOhms
Mounting Style
SMD/SMT
Package / Case
SCH-6
Power Dissipation
0.8 W
Ordering number : ENA1531A
SCH1333
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7028-002
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
1.8V drive
Halogen free compliance
Protection diode in
1
6
1.6
5
Parameter
2
0.5
4
3
0.2
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : SCH6
0.2
SCH1333-TL-H
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
SCH1333
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
3
TL
62712 TKIM/O1409PE TKIM TC-00002148
1, 2, 5, 6
4
2
×0.8mm)
DATA SHEET
: SCH6
: SOT-563
Marking
YJ
Ratings
--55 to +150
--20
±10
150
0.8
- -2
--8
No. A1531-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for SCH1333-TL-H

SCH1333-TL-H Summary of contents

Page 1

... Protection diode in • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Package Dimensions unit : mm (typ) 7028-002 SCH1333-TL-H 1.6 0 Drain 2 : Drain 3 : Gate 4 : Source ...

Page 2

... -- =10Ω D PW=10μs D.C.≤1% G SCH1333 P.G 50Ω S Ordering Information Device SCH1333-TL-H SCH1333 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--20V =0V I GSS V GS =±8V = (off =--10V =--1mA | yfs | V DS =--10V =-- (on =--1A =--4 ...

Page 3

... Drain Current Time -- --0.1 --1.0 Drain Current SCH1333 --3 --10V --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.8 --0.9 --1.0 0 IT14877 300 Ta=25 ° C 250 200 150 100 50 0 --8 --9 --10 --60 --40 --20 IT14879 --10V 3 2 --1 --0 ...

Page 4

... Total Gate Charge 1.0 When mounted on ceramic substrate 2 (900mm ×0.8mm) 0.8 0.6 0.4 0 100 Ambient Temperature °C SCH1333 2 -- --1 --0 Ta=25° Single pulse When mounted on ceramic substrate (900mm --0.01 3.0 3 --0.01 IT14885 120 140 160 ...

Page 5

... Taping Specifi cation SCH1333-TL-H SCH1333 No. A1531-5/7 ...

Page 6

... Outline Drawing SCH1333-TL-H SCH1333 Land Pattern Example Mass (g) Unit 0.004 mm * For reference Unit: mm 0.3 0.5 0.5 No. A1531-6/7 ...

Page 7

... Note on usage : Since the SCH1333 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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