SCH1333-TL-H ON Semiconductor, SCH1333-TL-H Datasheet - Page 2

• Manufacturer Part Number: SCH1333-TL-H
• Description: MOSFET PCH 1.8V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of SCH1333-TL-H

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 2 A
• Resistance Drain-source Rds (on): 130 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SCH-6
• Power Dissipation: 0.8 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
SCH1333-TL-H
--4.5V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD = --10V
D
S
I D = --1A
R L =10Ω
SCH1333
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
Package
SCH6
I D =--1mA, V GS =0V
V DS =--20V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--1A
I D =--1A, V GS =--4.5V
I D =--0.5A, V GS =--2.5V
I D =--0.1A, V GS =--1.8V
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
V DS =--10V, V GS =--4.5V, I D =--2A
I S =--2A, V GS =0V
SCH1333
Conditions
5,000pcs./reel
Shipping
min
--0.4
Pb Free and Halogen Free
--20
Ratings
typ
--0.85
memo
0.65
0.72
250
100
140
210
2.7
5.7
3.3
60
45
11
34
20
max
--1.4
--1.2
±10
130
196
315
--1
No. A1531-2/7
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V