AUIRL1404STRR International Rectifier, AUIRL1404STRR Datasheet

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AUIRL1404STRR

Manufacturer Part Number
AUIRL1404STRR
Description
MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRL1404STRR

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Resistance Drain-source Rds (on)
4 mOhms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
D2PAK
Gate Charge Qg
93.3 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
200 W
Factory Pack Quantity
800
Typical Turn-off Delay Time
38 ns
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
Features
HEXFET
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T
www.irf.com
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
R
Thermal Resistance
D
D
DM
AR
J
STG
D
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
@T
C
C
A
C
®
= 25°C
= 100°C
= 25°C
= 25°C
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB mounted)
Ã
A
) is 25°C, unless otherwise specified.
Parameter
Parameter
AUTOMOTIVE GRADE
e
GS
GS
@ 10V
@ 10V
d
i
G
Gate
G
AUIRL1404S
D
S
D
Typ.
0.50
2
–––
–––
300 (1.6mm from case )
Pak
-55 to + 175
HEXFET
Drain
V
R
I
160
110
Max.
D
640
200
520
±20
3.8
1.3
5.0
(BR)DSS
D
95
20
DS(on)
h
h
AUIRL1404L
TO-262
Max.
®
0.75
–––
40
max.
Power MOSFET
Source
S
160A
4mΩ
40V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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AUIRL1404STRR Summary of contents

Page 1

... Thermal Resistance R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient (PCB mounted) θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE G G Gate ) is 25°C, unless otherwise specified. A Parameter @ 10V GS ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

... Machine Model ESD Human Body Model Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage www.irf.com † ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V 4.3V 100 20μs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 5

1MHz iss rss 8000 oss iss 6000 4000 C oss 2000 C rss ...

Page 6

LIMITED BY PACKAGE 120 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 7

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

Page 8

... Recovery Current D.U. Re-Applied Voltage Inductor Curent 8 + • • ƒ • • • • Period D = Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® For N-channel HEXFET power MOSFETs „ P.W. Period [ ] *** V =10V www.irf.com ...

Page 9

2 2 www.irf.com 9 ...

Page 10

TO-262 Package Outline ( TO-262 Part Marking Information 10 Dimensions are shown in millimeters (inches)) www.irf.com ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

Page 12

... Ordering Information Base part Package Type AUIRL1404L TO-262 AUIRL1404S D2Pak 12 Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRL1404L AUIRL1404S AUIRL1404STRL AUIRL1404STRR www.irf.com ...

Page 13

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ...

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