AUIRL1404STRR International Rectifier, AUIRL1404STRR Datasheet - Page 5

• Manufacturer Part Number: AUIRL1404STRR
• Description: MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
• Manufacturer: International Rectifier

Specifications of AUIRL1404STRR

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Resistance Drain-source Rds (on): 4 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Gate Charge Qg: 93.3 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 200 W
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 38 ns

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10000
8000
6000
4000
2000
1000
100
10
0
1
0.0
Fig 7. Typical Source-Drain Diode
1
T = 175 C
J
Fig 5. Typical Capacitance Vs.
V
V
0.5
Drain-to-Source Voltage
DS
SD
°
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
T = 25 C
1.0
=
=
=
=
J
0V,
C
C
C
gs
gd
ds
°
C oss
+ C
+ C
C iss
C rss
1.5
10
f = 1MHz
gd ,
gd
C
2.0
ds
SHORTED
V
GS
2.5
= 0 V
100
3.0
10000
1000
100
20
16
12
10
8
4
0
0
1
I =
D
T
T
Single Pulse
Fig 8. Maximum Safe Operating Area
C
J
= 25 C
= 175 C
95A
Fig 6. Typical Gate Charge Vs.
OPERATION IN THIS AREA LIMITED
V
100
DS
°
Q , Total Gate Charge (nC)
°
Gate-to-Source Voltage
G
, Drain-to-Source Voltage (V)
200
BY R
V
V
DS
DS
10
DS(on)
= 32V
= 20V
FOR TEST CIRCUIT
300
SEE FIGURE
400
10us
100us
1ms
10ms
13
500
100
5