CTLDM303N-M832DS TR Central Semiconductor, CTLDM303N-M832DS TR Datasheet

CTLDM303N-M832DS TR

Manufacturer Part Number

CTLDM303N-M832DS TR

Description

MOSFET SMD Sm Signal Mosfet Dual N-Ch Enhanced

Manufacturer

Central Semiconductor

Datasheet

1.CTLDM303N-M832DS_TR.pdf (2 pages)

Specifications of CTLDM303N-M832DS TR

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

3.6 A

Resistance Drain-source Rds (on)

0.04 Ohms

Configuration

Dual

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TLM832DS

Forward Transconductance Gfs (max / Min)

11.8 S

Gate Charge Qg

13 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

1.65 W

Current page: 1 of 2
Download datasheet (675Kb)

APPLICATIONS:

• DC-DC converters

• Drive circuits

• Power management

MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T A =25°C unless otherwise noted)

SYMBOL

I GSSF , I GSSR

I DSS

BV DSS

V GS(th)

r DS(ON)

Q g(tot)

Q gs

Q gd

g FS

C rss

C iss

C oss

t on

t off

Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm

ENHANCEMENT-MODE

CTLDM303N-M832DS

DUAL N-CHANNEL

SURFACE MOUNT

SILICON MOSFET

TLM832DS CASE

TEST CONDITIONS

V GS =12V, V DS =0

V DS =20V, V GS =0

V GS =0, I D =250μA

V GS =V DS , I D =250μA

V GS =4.5V, I D =1.8A

V GS =2.5V, I D =1.8A

V DD =10V, V GS =4.5V, I D =3.6A

V DS =5.0V, I D =3.6A

V DS =10V, V GS =0, f=1.0MHz

V DD =10V, V GS =4.0V, I D =3.6A, R G =10Ω

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS

is a dual enhancement-mode N-Channel silicon MOSFET

designed for high speed pulsed amplifier and driver

applications. This energy efficient MOSFET offers

beneficially low r DS(ON) , low gate charge, and low

threshold voltage.

MARKING CODE: C330

FEATURES:

• Low r DS(ON) (0.078Ω MAX @ V GS =2.5V)

• High current (I D =3.6A)

• Low gate charge

SYMBOL

T J , T stg

V GS

V DS

I DM

Θ JA

P D

I D

MIN

0.6

0.033

0.042

TYP

11.8

590

5.0

0.9

1.0

-55 to +150

14.4

1.65

3.6

0.078

MAX

0.04

1.0

1.2

1.4

2.7

w w w. c e n t r a l s e m i . c o m

R2 (8-October 2012)

UNITS

°C/W

μA

°C

Related parts for CTLDM303N-M832DS TR

CTLDM303N-M832DS TR Summary of contents

Page 1

... Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low r DS(ON) , low gate charge, and low threshold voltage ...

Page 2

... CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM832DS CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate Q1 5) Drain Q2 2) Source Q1 6) Drain Q2 3) Gate Q2 7) Drain Q1 4) Source Q2 8) Drain Q1 MARKING CODE: C330 ...

Related keywords

CTLDM303N-M832DS TR datasheet
CTLDM303N-M832DS TR data sheet
CTLDM303N-M832DS TR pdf datasheet
CTLDM303N-M832DS TR component
CTLDM303N-M832DS TR part
CTLDM303N-M832DS TR distributor
CTLDM303N-M832DS TR RoHS
CTLDM303N-M832DS TR datasheet download