CTLDM303N-M832DS TR Central Semiconductor, CTLDM303N-M832DS TR Datasheet - Page 2

• Manufacturer Part Number: CTLDM303N-M832DS TR
• Description: MOSFET SMD Sm Signal Mosfet Dual N-Ch Enhanced
• Manufacturer: Central Semiconductor

Specifications of CTLDM303N-M832DS TR

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.6 A
• Resistance Drain-source Rds (on): 0.04 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TLM832DS
• Forward Transconductance Gfs (max / Min): 11.8 S
• Gate Charge Qg: 13 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.65 W

w w w. c e n t r a l s e m i . c o m
ENHANCEMENT-MODE
CTLDM303N-M832DS
DUAL N-CHANNEL
SURFACE MOUNT
SILICON MOSFET
TLM832DS CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Gate Q2
4) Source Q2
MARKING CODE: C330
PIN CONFIGURATION
5) Drain Q2
6) Drain Q2
7) Drain Q1
8) Drain Q1
R2 (8-October 2012)