VN0550N3-P002-G Supertex, VN0550N3-P002-G Datasheet

VN0550N3-P002-G

Manufacturer Part Number

VN0550N3-P002-G

Description

MOSFET 500V 60Ohm

Manufacturer

Supertex

Datasheet

1.VN0550N3-P013-G.pdf (5 pages)

Specifications of VN0550N3-P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 mA

Resistance Drain-source Rds (on)

60 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

10 ns

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Features

►

Applications

►

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Supertex inc.

Product Summary

Ordering Information

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF15 for layout and dimensions.

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VN0550

Device

DSS

500

(V)

/BV

ISS

Supertex inc.

DGS

and fast switching speeds

VN0550N3-G

Package

TO-92

(max)

DS(ON)

(Ω)

N-Channel Enhancement-Mode

Vertical DMOS FETs

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55°C to +150°C

(min)

(mA)

(Die in wafer form)

150

D(ON)

VN1550NW

Value

±20V

DGS

DSS

General Description

The Supertex VN0550 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input

impedance and positive temperature coefficient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Pin Configuration

Product Marking

Package may or may not include the following marks: Si or

Wafer / Die Options

(Die on adhesive tape)

Y Y W W

0 5 5 0

SiVN

Tel: 408-222-8888

VN1550NJ

SOURCE

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

(Die in waffle pack)

VN1550ND

VN0550

Related parts for VN0550N3-P002-G

VN0550N3-P002-G Summary of contents

Page 1

... Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Device TO-92 VN0550 VN0550N3-G For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’). Refer to Die Specification VF15 for layout and dimensions. Product Summary R BV /BV ...

Page 2

... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V 90% Supertex inc. I Power Dissipation D (pulsed (mA) (W) 250 1 25°C unless otherwise specified) A Min Typ ...

Page 3

... V (volts) DS Transconductance vs. Drain Current 0. 25V DS 0.32 0.24 0.16 0. 0.1 0.2 I (amperes) D Maximum Rated Safe Operating Area 1.0 0.1 TO-92 (DC) 0. 0.001 1 (volts) DS Supertex inc 10V GS 8.0V 6. 125 C O 0.3 0.4 0.5 100 1000 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics 0. 10V GS 0.20 6.0V 0.15 ...

Page 4

... O j Transfer Characteristics 0 25V DS 0.4 0.3 0.2 0 2.0 4.0 V (volts) GS Capacitance vs. Drain-to-Source Voltage 100 (volts) DS Supertex inc. (cont.) 100 150 6.0 8 1MHz C ISS C RSS 30 40 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current 100 5. 10V ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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