VN0550N3 Supertex Inc, VN0550N3 Datasheet

VN0550N3

Manufacturer Part Number

VN0550N3

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.VN0550N3.pdf (4 pages)

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Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Ordering Information

Distance of 1.6 mm from case for 10 seconds.

memories, displays, bipolar transistors, etc.)

500V

ISS

DSS

DGS

and fast switching speeds

(max)

60Ω

DS(ON)

N-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

150mA

300°C

± 20V

(min)

D(ON)

DGS

DSS

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Option

Note: See Package Outline section for dimensions.

Order Number / Package

VN0550N3

TO-92

S G D

VN0550

Related parts for VN0550N3

VN0550N3 Summary of contents

Page 1

... Package Option BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VN0550 TO-92 VN0550N3 TO-92 ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 78mA * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter Drain-to-Source BV DSS Breakdown Voltage V Gate Threshold Voltage GS(th) ∆V Change in V with Temperature ...

Page 3

Typical Performance Curves ° ° ° ° 3 VN0550 ° ° ...

Page 4

... Transfer Characteristics 0 25V DS 0.4 0.3 0.2 0 (volts) GS Capacitance vs. Drain-to-Source Voltage 100 f = 1MHz (volts) DS ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 100 100 150 0 V 1.4 1.2 1.0 0 ISS RSS 0 30 ...

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